Effect of ZnO-processing methods on device performance and stability of effective inverted solar cells

	Effect of ZnO-processing methods on device performance and stability of effective inverted solar cells
	Fan, Haijun; Zhu, Xiaozhang
刊名	APPLIED PHYSICS LETTERS
	2017-07-17
卷号	111 期号:3
英文摘要	The effect of ZnO electron-transporting layers from different processing methods on device performance as well as on stability was investigated. Although inverted devices incorporating a ZnO layer via a sol-gel method or single-solution processing method achieved comparable power conversion efficiency, the former device exhibited better long-term stability than the latter device. The reason for such a phenomenon was traced to oxygen-deficient defects, which affected the long-term stability of inverted devices by altering the resistance of the ZnO layer to oxygen intrusion and influenced the recombination state after long-term storage. Published by AIP Publishing.
语种	英语
内容类型	期刊论文
源URL	[http://ir.iccas.ac.cn/handle/121111/38959]
专题	化学研究所_有机固体实验室
作者单位	Chinese Acad Sci, Inst Chem, CAS Key Lab Organ Solids, Beijing Natl Lab Mol Sci, Beijing 100190, Peoples R China
推荐引用方式 GB/T 7714	Fan, Haijun,Zhu, Xiaozhang. Effect of ZnO-processing methods on device performance and stability of effective inverted solar cells[J]. APPLIED PHYSICS LETTERS,2017,111(3).
APA	Fan, Haijun,&Zhu, Xiaozhang.(2017).Effect of ZnO-processing methods on device performance and stability of effective inverted solar cells.APPLIED PHYSICS LETTERS,111(3).
MLA	Fan, Haijun,et al."Effect of ZnO-processing methods on device performance and stability of effective inverted solar cells".APPLIED PHYSICS LETTERS 111.3(2017).