Mechanism for an enhanced resistive switching effect of bilayer NiOx/TiO2 for resistive random access memory

doi:10.1016/j.jallcom.2017.06.178

CORC > 昆明植物研究所 > 中国科学院昆明植物研究所 > 植物化学与西部植物资源持续利用国家重点实验室

	Mechanism for an enhanced resistive switching effect of bilayer NiOx/TiO2 for resistive random access memory
	Zhou,Guangdong; Xiao,Lihua; Zhang,Shuangju; Wu,Bo; Liu,Xiaoqin; Zhou,Ankun
刊名	JOURNAL OF ALLOYS AND COMPOUNDS
	2017
卷号	722 页码:753-759
关键词	Electric-field Devices Bipolar Films Heterostructures Transition Behaviors Filament Matrix Cells Bilay Niox/tio2 Films Resistive Switching Memory Migration Of Oxygen Vacancy Ag Conduction Filamens
ISSN号	0925-8388
DOI	10.1016/j.jallcom.2017.06.178
英文摘要	Bilayer of NiOx/TiO2 thin film spin-coated and sputtering-deposited on the fluorine doped tin oxide (FTO) substrate is employed to develop a resistive random access memory device. An enhanced resistive switching (RS) behavior, which with appropriate resistance ratio of similar to 10(3), switching cycle endurance for 10(2) and long retention time for 10(4) s, is observed in the bilayer NiOx/TiO2 based device. Construction of contact-potential barrier, formation and rupture of a localized conduction filaments and migration of oxygen vacancy existed in the interface near electrodes co-contribute to the enhanced RS memory effects, but the migration of Ag+, Ni2x+ and diffusion of oxygen vacancies are the dominated ones. This work might give an insight into the mechanism of RS memory behaviors of an oxide-stacked structure device. (C) 2017 Published by Elsevier B.V.
学科主题	Chemistry, Physical ; Materials Science, Multidisciplinary ; Metallurgy & Metallurgical Engineering
语种	英语
内容类型	期刊论文
源URL	[http://ir.kib.ac.cn/handle/151853/54868]
专题	昆明植物研究所_植物化学与西部植物资源持续利用国家重点实验室
推荐引用方式 GB/T 7714	Zhou,Guangdong,Xiao,Lihua,Zhang,Shuangju,et al. Mechanism for an enhanced resistive switching effect of bilayer NiOx/TiO2 for resistive random access memory[J]. JOURNAL OF ALLOYS AND COMPOUNDS,2017,722:753-759.
APA	Zhou,Guangdong,Xiao,Lihua,Zhang,Shuangju,Wu,Bo,Liu,Xiaoqin,&Zhou,Ankun.(2017).Mechanism for an enhanced resistive switching effect of bilayer NiOx/TiO2 for resistive random access memory.JOURNAL OF ALLOYS AND COMPOUNDS,722,753-759.
MLA	Zhou,Guangdong,et al."Mechanism for an enhanced resistive switching effect of bilayer NiOx/TiO2 for resistive random access memory".JOURNAL OF ALLOYS AND COMPOUNDS 722(2017):753-759.