An Improved Domain Decomposition Method for Drop Impact Reliability Analysis of 3-D ICs

doi:10.1109/TCPMT.2018.2853157

CORC > 数学与系统科学研究院 > 中国科学院数学与系统科学研究院 > 计算数学与科学工程计算研究所

	An Improved Domain Decomposition Method for Drop Impact Reliability Analysis of 3-D ICs
	Zhou, Hao 1; Zhu, Hengliang 1; Cui, Tao2 ; Pan, David Z.1,3; Zhou, Dian 1,4; Zeng, Xuan 1
刊名	IEEE TRANSACTIONS ON COMPONENTS PACKAGING AND MANUFACTURING TECHNOLOGY
	2018-10-01
卷号	8 期号:10 页码:1788-1799
关键词	Domain decomposition (DD) drop test reliability through-silicon via (TSV)
ISSN号	2156-3950
DOI	10.1109/TCPMT.2018.2853157
英文摘要	Drop test is usually adopted in the integrated circuit (IC) testing to estimate the shock resistance capability of IC packaging. Generally, it is very time-consuming for the drop test simulation, and therefore the fast numerical approach is needed to reduce the computational cost. In this paper, we propose an efficient drop test simulator for through-silicon-via (TSV)based 3-D IC to simulate its mechanical behaviors under drop impact. The proposed simulator is based on the idea of domain decomposition (DD) to improve the condition number of the coefficient matrix of the solver. We further develop two efficient numerical techniques in the simulator to improve its efficiency. First, a second-order formulation is proposed for the initial solution selection in preconditioned conjugate gradient (PCG) solver, which can efficiently reduce the number of PCG iterations at each time point during simulation. Second, an equivalent structure-embedded model is proposed and applied in the first Schwarz iteration to efficiently reduce the number of Schwarz iterations in DD method. Numerical experiments show that the proposed drop test simulator can achieve 7.03x speedup in comparison with the conventional finite-element method-based solver. It is demonstrated in this paper through several examples with multichip layers, of which each chip layer consists of an 8 x 8 TSV array, that the proposed simulator can be widely applied to reliability analysis of 3-D ICs under drop impact.
资助项目	National Key Research and Development Program of China[2016YFB0201304] ; National Natural Science Foundation of China Research Project[61376040] ; National Natural Science Foundation of China Research Project[61574046] ; National Natural Science Foundation of China Research Project[61774045] ; National Natural Science Foundation of China Research Project[61574044] ; National Natural Science Foundation of China Research Project[61628402] ; National Natural Science Foundation of China Research Project[11771440] ; National Natural Science Foundation of China Research Project[91530323] ; National Natural Science Foundation of China Research Project[11101417] ; Key Research Program of the Chinese Academy of Sciences[XDPB11] ; Recruitment Program of Global Experts through the Thousand Talents Plan
WOS研究方向	Engineering ; Materials Science
语种	英语
出版者	IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
WOS记录号	WOS:000447078400009
内容类型	期刊论文
源URL	[http://ir.amss.ac.cn/handle/2S8OKBNM/31427]
专题	计算数学与科学工程计算研究所
通讯作者	Zhu, Hengliang; Zeng, Xuan
作者单位	1.Fudan Univ, State Key Lab ASIC & Syst, Dept Microelect, Shanghai 200433, Peoples R China 2.Chinese Acad Sci, State Key Lab Sci & Engn Comp, Natl Ctr Math & Interdisciplinary Sci, Inst Computat Math,Acad Math & Syst Sci, Beijing 100190, Peoples R China 3.Univ Texas Austin, Dept Elect & Comp Engn, Austin, TX 78712 USA 4.Univ Texas Dallas, Dept Elect Engn, Richardson, TX 75080 USA
推荐引用方式 GB/T 7714	Zhou, Hao,Zhu, Hengliang,Cui, Tao,et al. An Improved Domain Decomposition Method for Drop Impact Reliability Analysis of 3-D ICs[J]. IEEE TRANSACTIONS ON COMPONENTS PACKAGING AND MANUFACTURING TECHNOLOGY,2018,8(10):1788-1799.
APA	Zhou, Hao,Zhu, Hengliang,Cui, Tao,Pan, David Z.,Zhou, Dian,&Zeng, Xuan.(2018).An Improved Domain Decomposition Method for Drop Impact Reliability Analysis of 3-D ICs.IEEE TRANSACTIONS ON COMPONENTS PACKAGING AND MANUFACTURING TECHNOLOGY,8(10),1788-1799.
MLA	Zhou, Hao,et al."An Improved Domain Decomposition Method for Drop Impact Reliability Analysis of 3-D ICs".IEEE TRANSACTIONS ON COMPONENTS PACKAGING AND MANUFACTURING TECHNOLOGY 8.10(2018):1788-1799.