design and implementation of earth operating system | |
Liang Hongliang ; Li Shoupeng ; Dong Shouji ; Yuan Chunyang ; Niu Shaozhang | |
刊名 | Chinese Journal of Electronics |
2012 | |
卷号 | 21期号:1页码:33-36 |
关键词 | Co基合金 热腐蚀 酸性熔融反应 活性氧化反应 |
ISSN号 | 1022-4653 |
中文摘要 | 利用箱式电阻炉、SEM等手段,研究了一种定向凝固Co基合金在不同介质中的热腐蚀行为及机理。研究结果表明:合金在Na2SO4中的热腐蚀最为严重,在75%Na2SO4+25%NaCl中的热腐蚀程度最轻。合金在Na2SO4中的热腐蚀过程中主要发生了酸性熔融反应,形成了Al2(SO4)3,Cr2Ni3,Cr4Ni15W和Al4CrNi15等腐蚀产物,而在NaCl中的热腐蚀主要发生了活性氧化反应,合金在75%Na2SO4+25%NaCl中热腐蚀时,部分酸性熔融反应和活性氧化反应受到抑制,主要形成了一系列的Ni-S化合物。 |
英文摘要 | As secure infrastructural software, secure operating systems are well known for its protection against kinds of threats and attacks. In this paper, we report the work of building EARTH operating system towards to "structurized protection" level of national security standards. EARTH has a flexible architecture supporting dynamic multiple policies, effective mandatory access control mechanism. We give formal system specification and proof of the security models and provide covert channel analysis and mitigation methods. Our experiments show that EARTH has good system performance. Furthermore, the research and development experiences and lessons learned in EARTH project is discussed. |
学科主题 | Engineering |
收录类别 | EI ; CNKI ; SCI |
资助信息 | National High Technology Research and Development Program of China (863 Program) 2007AA010601; National Natural Science Foundation of China 61070207; LOIS SYSKF1006 |
语种 | 英语 |
WOS记录号 | WOS:000299722400007 |
公开日期 | 2013-09-17 |
内容类型 | 期刊论文 |
源URL | [http://ir.iscas.ac.cn/handle/311060/14912] |
专题 | 软件研究所_软件所图书馆_期刊论文 |
推荐引用方式 GB/T 7714 | Liang Hongliang,Li Shoupeng,Dong Shouji,et al. design and implementation of earth operating system[J]. Chinese Journal of Electronics,2012,21(1):33-36. |
APA | Liang Hongliang,Li Shoupeng,Dong Shouji,Yuan Chunyang,&Niu Shaozhang.(2012).design and implementation of earth operating system.Chinese Journal of Electronics,21(1),33-36. |
MLA | Liang Hongliang,et al."design and implementation of earth operating system".Chinese Journal of Electronics 21.1(2012):33-36. |
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