Large-area and highly uniform carbon nanotube film for high-performance thin film transistors

doi:10.1007/s12274-018-2025-9

	Large-area and highly uniform carbon nanotube film for high-performance thin film transistors
	Dong, Guodong 1,2; Zhao, Jie 1,2; Shen, Lijun3,4 ; Xia, Jiye 1,2; Meng, Hu 5; Yu, Wenhuan 3,4; Huang, Qi 1,2; Han, Hua3,4 ; Liang, Xuelei 1,2; Peng, Lianmao 1,2
刊名	NANO RESEARCH
	2018-08-01
卷号	11 期号:8 页码:4356-4367
关键词	Carbon Nanotube Thin Film Large Area Uniform Transistor
DOI	10.1007/s12274-018-2025-9
文献子类	Article
英文摘要	Carbon nanotube thin film transistors (CNT-TFTs) are a potential TFT technology for future high-performance macroelectronics. Practical application of CNT-TFTs requires the production of large-area, highly uniform, density-controllable, repeatable, and high-throughput CNT thin films. In this study, CNT films were fabricated on 4-inch Si wafers and 2.5th generation (G2.5) backplane glasses (370 mm x 470 mm) by dip coating using a chloroform-dispersed high-purity semiconducting CNT solution. The CNT density was controlled by the solution concentration and coating times, but was almost independent of the substrate lifting speed (1-450 mm.min(-1)), which enables high-throughput CNT thin film production. We developed an image processing software to efficiently characterize the density and uniformity of the large-area CNT films. Using the software, we confirmed that the CNT films are highly uniform with coefficients of variance (C-v) < 10% on 4-inch Si wafers and similar to 13.8% on G2.5 backplane glasses. High-performance CNT-TFTs with a mobility of 45-55 cm(2).V-1.s(-1) were obtained using the fabricated CNT films with a high-performance uniformity (C-v approximate to 11%-13%) on a 4-inch wafer. To our knowledge, this is the first fabrication and detailed characterization of such large-area, high-purity, semiconducting CNT films for TFT applications, which is a significant step toward manufacturing CNT-TFTs.
WOS关键词	FIELD-EFFECT TRANSISTORS ; SCALE INTEGRATED-CIRCUITS ; DIP-COATING METHOD ; HIGH ON/OFF RATIO ; LIGHT ; MACROELECTRONICS ; NETWORKS ; FABRICATION ; DISPLAYS ; CONTACT
WOS研究方向	Chemistry ; Science & Technology - Other Topics ; Materials Science ; Physics
语种	英语
WOS记录号	WOS:000440733100035
资助机构	National Key Research and Development Program(2016YFA0201902) ; National Natural Science Foundation of China(61621061) ; Beijing Municipal Science & Technology Commission(Z171100002017001 ; Chinese Academy of Science(YZ201671) ; Z161100000216146)
内容类型	期刊论文
源URL	[http://ir.ia.ac.cn/handle/173211/21784]
专题	自动化研究所_类脑智能研究中心
通讯作者	Lijun Shen, Xuelei Liang
作者单位	1.Peking Univ, Key Lab Phys & Chem Nanodevices, Beijing 100871, Peoples R China 2.Peking Univ, Dept Elect, Beijing 100871, Peoples R China 3.Chinese Acad Sci, Inst Automat, Beijing 100190, Peoples R China 4.Univ Chinese Acad Sci, Beijing 100049, Peoples R China 5.BOE Technol Grp Co Ltd, Beijing 100176, Peoples R China
推荐引用方式 GB/T 7714	Dong, Guodong,Zhao, Jie,Shen, Lijun,et al. Large-area and highly uniform carbon nanotube film for high-performance thin film transistors[J]. NANO RESEARCH,2018,11(8):4356-4367.
APA	Dong, Guodong.,Zhao, Jie.,Shen, Lijun.,Xia, Jiye.,Meng, Hu.,...&Lijun Shen, Xuelei Liang.(2018).Large-area and highly uniform carbon nanotube film for high-performance thin film transistors.NANO RESEARCH,11(8),4356-4367.
MLA	Dong, Guodong,et al."Large-area and highly uniform carbon nanotube film for high-performance thin film transistors".NANO RESEARCH 11.8(2018):4356-4367.