Effects of annealing temperature on the electrical property and microstructure of aluminum contact on n-type 3C-SiC

doi:10.1088/1674-1056/23/6/066803

CORC > 重庆绿色智能技术研究院 > 中国科学院重庆绿色智能技术研究院 > 精准医疗单分子诊断技术研究中心

	Effects of annealing temperature on the electrical property and microstructure of aluminum contact on n-type 3C-SiC
	Dai Chong-Chong 1,2; Liu Xue-Chao 1; Zhou Tian-Yu 1,2; Zhuo Shi-Yi 1; Shi Biao3 ; Shi Er-Wei 1
刊名	CHINESE PHYSICS B
	2014-06-01
卷号	23 期号:6 页码:5
关键词	Al/3C-SiC ohmic contact specific contact resistance
ISSN号	1674-1056
DOI	10.1088/1674-1056/23/6/066803
通讯作者	Liu, XC (reprint author), Chinese Acad Sci, Shanghai Inst Ceram, Shanghai 201800, Peoples R China.
英文摘要	The 3C-SiC thin films used herein are grown on Si substrates by chemical vapor deposition. Al contacts with different thickness values are deposited on the 3C-SiC/Si (100) structure by the magnetron sputtering method and are annealed at different temperatures. We focus on the effects of the annealing temperature on the ohmic contact properties and microstructure of Al/3C-SiC structure. The electrical properties of Al contacts to n-type 3C-SiC are characterized by the transmission line method. The crystal structures and chemical phases of Al contacts are examined by X-ray diffraction, Raman spectra, and transmission electron microscopy, respectively. It is found that the Al contacts exhibit ohmic contact behaviors when the annealing temperature is below 550 degrees C, and they become Schottky contacts when the annealing temperature is above 650 degrees C. A minimum specific contact resistance of 1.8 x 10(-4) Omega.cm(2) is obtained when the Al contact is annealed at 250 degrees C.
资助项目	Shanghai Rising-Star Program, China[13QA1403800] ; Young Scientists Fund of the National Natural Science Foundation of China[51002176] ; Innovation Program of the Chinese Academy of Sciences[KJCX2-EW-W10] ; Industry-Academic Joint Technological Innovations Fund Project of Jiangsu Province, China[BY2011119] ; National High Technology Research and Development Program of China[2013AA031603] ; National High Technology Research and Development Program of China[2014AA032602]
WOS研究方向	Physics
语种	英语
出版者	IOP PUBLISHING LTD
WOS记录号	WOS:000338668200073
内容类型	期刊论文
源URL	[http://119.78.100.138/handle/2HOD01W0/856]
专题	精准医疗单分子诊断技术研究中心
通讯作者	Liu Xue-Chao
作者单位	1.Chinese Acad Sci, Shanghai Inst Ceram, Shanghai 201800, Peoples R China 2.Univ Chinese Acad Sci, Beijing 100049, Peoples R China 3.Chinese Acad Sci, Chongqing Inst Green & Intelligent Technol, Chongqing 401122, Peoples R China
推荐引用方式 GB/T 7714	Dai Chong-Chong,Liu Xue-Chao,Zhou Tian-Yu,et al. Effects of annealing temperature on the electrical property and microstructure of aluminum contact on n-type 3C-SiC[J]. CHINESE PHYSICS B,2014,23(6):5.
APA	Dai Chong-Chong,Liu Xue-Chao,Zhou Tian-Yu,Zhuo Shi-Yi,Shi Biao,&Shi Er-Wei.(2014).Effects of annealing temperature on the electrical property and microstructure of aluminum contact on n-type 3C-SiC.CHINESE PHYSICS B,23(6),5.
MLA	Dai Chong-Chong,et al."Effects of annealing temperature on the electrical property and microstructure of aluminum contact on n-type 3C-SiC".CHINESE PHYSICS B 23.6(2014):5.