Band Structure and Photoelectric Characterization of GeSe Monolayers

doi:10.1002/adfm.201704855

CORC > 重庆绿色智能技术研究院 > 中国科学院重庆绿色智能技术研究院 > 量子信息技术研究中心

	Band Structure and Photoelectric Characterization of GeSe Monolayers
	Zhao, Hongquan1 ; Mao, Yuliang 2; Mao, Xin 2; Shi, Xuan1 ; Xu, Congshen 2; Wang, Chunxiang 1; Zhang, Shangmin 1; Zhou, Dahua1
刊名	ADVANCED FUNCTIONAL MATERIALS
	2018-02-07
卷号	28 期号:6 页码:10
关键词	band structures GeSe monolayers photoelectric devices semiconductors
ISSN号	1616-301X
DOI	10.1002/adfm.201704855
英文摘要	Germanium selenide monolayer is promising in photoelectric applications for its natural p-type semiconductor and complicated band structures. Basic experimental investigations of few-to-monolayer germanium selenide are still absent; major scientific challenge is to develop of techniques for controllably thinned monolayers. In this study laser thinned monolayer germanium selenide on SiO2/Si substrates is demonstrated. A broad photoluminescence spectrum with eight continues peaks is observed from visible to infrared wavebands centered at approximate to 589, 655, 737, 830, 1034, 1178, 1314, and 1456 nm, respectively. First-principle calculations based on density functional theory illuminate the band structures of few-to-monolayer germanium selenide. Photoluminescence investigation combined with first-principle calculations indicates that the indirect to direct bandgap transition happens at few layers of N = 3. Current-voltage and photoresponse characteristics of monolayer based devices show 3.3 times the photosensitivity and much faster falling edges compared with those of the pristine nanosheet based devices. The present results provide useful insight into deep understanding of thickness dependent performances of germanium selenide monocrystalline.
资助项目	foundation from National Natural Science Foundation of China[11374251] ; foundation from National Natural Science Foundation of China[61775214] ; foundation from National Natural Science Foundation of China[11471280] ; foundation from National Natural Science Foundation of China[61601433] ; Chongqing Science and Technology Commission[cstc2013jcyjC40001] ; CAS "Light of West China" Programs ; Hunan Provincial Natural Science Foundation of China[2016JJ2130] ; Research Foundation of Education Bureau of Hunan Province, China[16A207] ; Research Foundation of Education Bureau of Hunan Province, China[17A207] ; Program for Changjiang Scholars and Innovative Research Team in University[IRT13093] ; Special Program for Applied Research on Super Computation of the NSFC-Guangdong Joint Fund (the second phase)
WOS研究方向	Chemistry ; Science & Technology - Other Topics ; Materials Science ; Physics
语种	英语
出版者	WILEY-V C H VERLAG GMBH
WOS记录号	WOS:000424152900008
内容类型	期刊论文
源URL	[http://119.78.100.138/handle/2HOD01W0/6261]
专题	量子信息技术研究中心微纳制造与系统集成研究中心
通讯作者	Zhao, Hongquan; Mao, Yuliang
作者单位	1.Chinese Acad Sci, Chongqing Inst Green & Intelligent Technol, ShuiTu Technol Dev Zone, 266 Fangzheng Ave, Chongqing 400714, Peoples R China 2.Xiangtan Univ, Hunan Key Lab Micronano Energy Mat & Devices, Sch Phys & Optoelect Engn, Xiangtan 411105, Hunan, Peoples R China
推荐引用方式 GB/T 7714	Zhao, Hongquan,Mao, Yuliang,Mao, Xin,et al. Band Structure and Photoelectric Characterization of GeSe Monolayers[J]. ADVANCED FUNCTIONAL MATERIALS,2018,28(6):10.
APA	Zhao, Hongquan.,Mao, Yuliang.,Mao, Xin.,Shi, Xuan.,Xu, Congshen.,...&Zhou, Dahua.(2018).Band Structure and Photoelectric Characterization of GeSe Monolayers.ADVANCED FUNCTIONAL MATERIALS,28(6),10.
MLA	Zhao, Hongquan,et al."Band Structure and Photoelectric Characterization of GeSe Monolayers".ADVANCED FUNCTIONAL MATERIALS 28.6(2018):10.