Floating-gate controlled programmable non-volatile black phosphorus PNP junction memory

doi:10.1039/c7nr08515j

CORC > 重庆绿色智能技术研究院 > 中国科学院重庆绿色智能技术研究院 > 科技处

	Floating-gate controlled programmable non-volatile black phosphorus PNP junction memory
	Zhang, Pengfei 1; Li, Dong 2; Chen, Mingyuan 2; Zong, Qijun 2; Shen, Jun3 ; Wan, Dongyun 1; Zhu, Jingtao 2; Zhang, Zengxing 2
刊名	NANOSCALE
	2018-02-21
卷号	10 期号:7 页码:3148-3152
ISSN号	2040-3364
DOI	10.1039/c7nr08515j
英文摘要	To meet the increasing requirements of minimizing circuits, the development of novel device architectures that use ultra-thin two-dimensional materials is encouraged. Here, we demonstrate a nonvolatile black phosphorus (BP) PNP junction in a BP/h-BN/graphene heterostructure in which BP acts as a transport channel layer, hexagonal boron nitride (h-BN) serves as a tunnel barrier layer and graphene is the charge-trapping layer. The device architecture is designed such that only the middle part of the BP is aligned over the graphene flake, enabling the flexible tuning of the charge carriers in the BP over the graphene charge-trapping layer. Thus, the device exhibits the ability to work in two different operating modes (PNP and PP+P). Each operating mode can be retained well and demonstrates non-volatile behavior, and each can be programmed by using the control-gate.
资助项目	Natural Science Foundation of Shanghai[16ZR1439400] ; Natural Science Foundation of Shanghai[17ZR1447700] ; National Natural Science Foundation of China[U1432244] ; National Natural Science Foundation of China[U1632108] ; Chinese Academy of Sciences[U1632108] ; Science and Technology Commission of Shanghai Municipality[16JC1401700]
WOS研究方向	Chemistry ; Science & Technology - Other Topics ; Materials Science ; Physics
语种	英语
出版者	ROYAL SOC CHEMISTRY
WOS记录号	WOS:000425348100005
内容类型	期刊论文
源URL	[http://119.78.100.138/handle/2HOD01W0/6254]
专题	科技处
通讯作者	Shen, Jun; Wan, Dongyun; Zhang, Zengxing
作者单位	1.Shanghai Univ, Sch Mat Sci & Engn, Shanghai 200444, Peoples R China 2.Tongji Univ, Sch Phys Sci & Engn, Shanghai Key Lab Special Artificial Microstruct M, Shanghai 200092, Peoples R China 3.Chinese Acad Sci, Chongqing Inst Green & Intelligent Technol, Chongqing 400714, Peoples R China
推荐引用方式 GB/T 7714	Zhang, Pengfei,Li, Dong,Chen, Mingyuan,et al. Floating-gate controlled programmable non-volatile black phosphorus PNP junction memory[J]. NANOSCALE,2018,10(7):3148-3152.
APA	Zhang, Pengfei.,Li, Dong.,Chen, Mingyuan.,Zong, Qijun.,Shen, Jun.,...&Zhang, Zengxing.(2018).Floating-gate controlled programmable non-volatile black phosphorus PNP junction memory.NANOSCALE,10(7),3148-3152.
MLA	Zhang, Pengfei,et al."Floating-gate controlled programmable non-volatile black phosphorus PNP junction memory".NANOSCALE 10.7(2018):3148-3152.