Electronic properties of bilayer phosphorene quantum dots in the presence of perpendicular electric and magnetic fields

doi:10.1103/PhysRevB.96.155425

CORC > 合肥物质科学研究院 > 中国科学院合肥物质科学研究院 > 中科院固体物理研究所

	Electronic properties of bilayer phosphorene quantum dots in the presence of perpendicular electric and magnetic fields
	Li, L. L.1,2; Moldovan, D.1; Xu, W.2,3; Peeters, F. M.1
刊名	PHYSICAL REVIEW B
	2017-10-10
卷号	96 期号:15
DOI	10.1103/PhysRevB.96.155425
文献子类	Article
英文摘要	Using the tight-binding approach, we investigate the electronic properties of bilayer phosphorene (BLP) quantum dots (QDs) in the presence of perpendicular electric and magnetic fields. Since BLP consists of two coupled phosphorene layers, it is of interest to examine the layer-dependent electronic properties of BLP QDs, such as the electronic distributions over the two layers and the so-produced layer-polarization features, and to see how these properties are affected by the magnetic field and the bias potential. We find that in the absence of a bias potential only edge states are layer polarized while the bulk states are not, and the layer-polarization degree (LPD) of the unbiased edge states increases with increasing magnetic field. However, in the presence of a bias potential both the edge and bulk states are layer polarized, and the LPD of the bulk (edge) states depends strongly (weakly) on the interplay of the bias potential and the interlayer coupling. At high magnetic fields, applying a bias potential renders the bulk electrons in a BLP QD to be mainly distributed over the top or bottom layer, resulting in layer-polarized bulk Landau levels (LLs). In the presence of a large bias potential that can drive a semiconductor-to-semimetal transition in BLP, these bulk LLs exhibit different magnetic-field dependences, i.e., the zeroth LLs exhibit a linearlike dependence on the magnetic field while the other LLs exhibit a square-root-like dependence.
WOS关键词	LAYER BLACK PHOSPHORUS
WOS研究方向	Physics
语种	英语
WOS记录号	WOS:000412699800005
资助机构	Flemish Science Foundation (FWO-Vl) ; Flemish Science Foundation (FWO-Vl) ; Flemish Science Foundation (FWO-Vl) ; Flemish Science Foundation (FWO-Vl) ; Flemish Science Foundation (FWO-Vl) ; Flemish Science Foundation (FWO-Vl) ; Flemish Science Foundation (FWO-Vl) ; Flemish Science Foundation (FWO-Vl) ; National Natural Science Foundation of China(11574319) ; National Natural Science Foundation of China(11574319) ; National Natural Science Foundation of China(11574319) ; National Natural Science Foundation of China(11574319) ; National Natural Science Foundation of China(11574319) ; National Natural Science Foundation of China(11574319) ; National Natural Science Foundation of China(11574319) ; National Natural Science Foundation of China(11574319) ; Chinese Academy of Sciences ; Chinese Academy of Sciences ; Chinese Academy of Sciences ; Chinese Academy of Sciences ; Chinese Academy of Sciences ; Chinese Academy of Sciences ; Chinese Academy of Sciences ; Chinese Academy of Sciences ; Flemish Science Foundation (FWO-Vl) ; Flemish Science Foundation (FWO-Vl) ; Flemish Science Foundation (FWO-Vl) ; Flemish Science Foundation (FWO-Vl) ; Flemish Science Foundation (FWO-Vl) ; Flemish Science Foundation (FWO-Vl) ; Flemish Science Foundation (FWO-Vl) ; Flemish Science Foundation (FWO-Vl) ; National Natural Science Foundation of China(11574319) ; National Natural Science Foundation of China(11574319) ; National Natural Science Foundation of China(11574319) ; National Natural Science Foundation of China(11574319) ; National Natural Science Foundation of China(11574319) ; National Natural Science Foundation of China(11574319) ; National Natural Science Foundation of China(11574319) ; National Natural Science Foundation of China(11574319) ; Chinese Academy of Sciences ; Chinese Academy of Sciences ; Chinese Academy of Sciences ; Chinese Academy of Sciences ; Chinese Academy of Sciences ; Chinese Academy of Sciences ; Chinese Academy of Sciences ; Chinese Academy of Sciences
内容类型	期刊论文
源URL	[http://ir.hfcas.ac.cn:8080/handle/334002/33716]
专题	合肥物质科学研究院_中科院固体物理研究所
作者单位	1.Univ Antwerp, Dept Phys, Groenenborgerlaan 171, B-2020 Antwerp, Belgium 2.Chinese Acad Sci, Inst Solid State Phys, Key Lab Mat Phys, Hefei 230031, Anhui, Peoples R China 3.Yunnan Univ, Dept Phys, Kunming 650091, Yunnan, Peoples R China
推荐引用方式 GB/T 7714	Li, L. L.,Moldovan, D.,Xu, W.,et al. Electronic properties of bilayer phosphorene quantum dots in the presence of perpendicular electric and magnetic fields[J]. PHYSICAL REVIEW B,2017,96(15).
APA	Li, L. L.,Moldovan, D.,Xu, W.,&Peeters, F. M..(2017).Electronic properties of bilayer phosphorene quantum dots in the presence of perpendicular electric and magnetic fields.PHYSICAL REVIEW B,96(15).
MLA	Li, L. L.,et al."Electronic properties of bilayer phosphorene quantum dots in the presence of perpendicular electric and magnetic fields".PHYSICAL REVIEW B 96.15(2017).