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Basic Properties of Nd-Doped GYSGG Laser Crystal
Ding, Shoujun1,2; Zhang, Qingli1; Luo, Jianqiao1,3; Liu, Wenpeng1; Sun, Dunlu1; Wang, Xiaofei1; Sun, Guihua1; Gao, Jinyun1
刊名CRYSTAL RESEARCH AND TECHNOLOGY
2017-09-01
卷号52期号:9
关键词Nd:Gysgg Laser Crystal Mechanical Properties Chemical Etching Spectral Properties
DOI10.1002/crat.201700132
文献子类Article
英文摘要In the present work, we investigated the mechanical properties (including hardness, fracture toughness, brittleness index and yield strength) of Nd0.03Gd0.93Y2.04Sc2Ga3O12 (Nd:GYSGG) laser crystal using Vickers microhardness tester, for the first time. The defects morphology of Nd:GYSGG crystal were investigated by using chemical etching method with phosphoric acid etchant. The absorption spectrum of Nd:GYSGG from 300 to 2800 nm was measured at room temperature and the absorption peaks were assigned. The fluorescence lifetime of the (F3/2I11/2)-F-4-I-4 transition of Nd3+ in GYSGG is fitted to be 221.3 s. The three Judd-Ofelt intense parameters (2, 4, 6) were calculated to be 0.329 x 10(-20) cm(2), 2.761 x 10(-20) cm(2) and 4.222 x 10(-20) cm(2), respectively. All these demonstrate that Nd:GYSGG crystal is a good candidate laser material.
WOS关键词SINGLE-CRYSTALS ; MU-M ; SPECTROSCOPIC PROPERTIES ; ND/GYSGG LASER ; GROWTH ; HARDNESS ; OUTPUT ; GGG
WOS研究方向Crystallography
语种英语
WOS记录号WOS:000411144900009
资助机构National Natural Science Foundation of China(51502292 ; National Natural Science Foundation of China(51502292 ; National Natural Science Foundation of China(51502292 ; National Natural Science Foundation of China(51502292 ; National Natural Science Foundation of China(51502292 ; National Natural Science Foundation of China(51502292 ; National Natural Science Foundation of China(51502292 ; National Natural Science Foundation of China(51502292 ; National Natural Science Foundation of China(51502292 ; National Natural Science Foundation of China(51502292 ; National Natural Science Foundation of China(51502292 ; National Natural Science Foundation of China(51502292 ; National Natural Science Foundation of China(51502292 ; National Natural Science Foundation of China(51502292 ; National Natural Science Foundation of China(51502292 ; National Natural Science Foundation of China(51502292 ; Open Research Fund of the State Key Laboratory of Pulsed Power Laser Technology, Electronic Engineering Institute(SKL2015KF01) ; Open Research Fund of the State Key Laboratory of Pulsed Power Laser Technology, Electronic Engineering Institute(SKL2015KF01) ; Open Research Fund of the State Key Laboratory of Pulsed Power Laser Technology, Electronic Engineering Institute(SKL2015KF01) ; Open Research Fund of the State Key Laboratory of Pulsed Power Laser Technology, Electronic Engineering Institute(SKL2015KF01) ; Open Research Fund of the State Key Laboratory of Pulsed Power Laser Technology, Electronic Engineering Institute(SKL2015KF01) ; Open Research Fund of the State Key Laboratory of Pulsed Power Laser Technology, Electronic Engineering Institute(SKL2015KF01) ; Open Research Fund of the State Key Laboratory of Pulsed Power Laser Technology, Electronic Engineering Institute(SKL2015KF01) ; Open Research Fund of the State Key Laboratory of Pulsed Power Laser Technology, Electronic Engineering Institute(SKL2015KF01) ; Open Research Fund of the State Key Laboratory of Pulsed Power Laser Technology, Electronic Engineering Institute(SKL2015KF01) ; 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Open Research Fund of the State Key Laboratory of Pulsed Power Laser Technology, Electronic Engineering Institute(SKL2015KF01) ; Open Research Fund of the State Key Laboratory of Pulsed Power Laser Technology, Electronic Engineering Institute(SKL2015KF01) ; Open Research Fund of the State Key Laboratory of Pulsed Power Laser Technology, Electronic Engineering Institute(SKL2015KF01) ; Open Research Fund of the State Key Laboratory of Pulsed Power Laser Technology, Electronic Engineering Institute(SKL2015KF01) ; Open Research Fund of the State Key Laboratory of Pulsed Power Laser Technology, Electronic Engineering Institute(SKL2015KF01) ; Open Research Fund of the State Key Laboratory of Pulsed Power Laser Technology, Electronic Engineering Institute(SKL2015KF01) ; Open Research Fund of the State Key Laboratory of Pulsed Power Laser Technology, Electronic Engineering Institute(SKL2015KF01) ; Open Research Fund of the State Key Laboratory of Pulsed Power Laser Technology, Electronic Engineering Institute(SKL2015KF01) ; 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内容类型期刊论文
源URL[http://ir.hfcas.ac.cn:8080/handle/334002/33682]  
专题合肥物质科学研究院_中科院安徽光学精密机械研究所
作者单位1.Chinese Acad Sci, Anhui Inst Opt & Fine Mech, Hefei 230031, Anhui, Peoples R China
2.Univ Sci & Technol China, Hefei 230026, Anhui, Peoples R China
3.Inst Elect Engn, State Key Lab Pulsed Power Laser Technol, Hefei 230037, Anhui, Peoples R China
推荐引用方式
GB/T 7714		 Ding, Shoujun,Zhang, Qingli,Luo, Jianqiao,et al. Basic Properties of Nd-Doped GYSGG Laser Crystal[J]. CRYSTAL RESEARCH AND TECHNOLOGY,2017,52(9).
APA Ding, Shoujun.,Zhang, Qingli.,Luo, Jianqiao.,Liu, Wenpeng.,Sun, Dunlu.,...&Gao, Jinyun.(2017).Basic Properties of Nd-Doped GYSGG Laser Crystal.CRYSTAL RESEARCH AND TECHNOLOGY,52(9).
MLA Ding, Shoujun,et al."Basic Properties of Nd-Doped GYSGG Laser Crystal".CRYSTAL RESEARCH AND TECHNOLOGY 52.9(2017).
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