Thickness dependence of the charge-density-wave transition temperature in VSe2

	Thickness dependence of the charge-density-wave transition temperature in VSe2
	Jiyong Yang 1; Weike Wang 2; Yan Liu 1; Haifeng Du 1; Wei Ning 1; Guolin Zheng 1; Chiming Jin 1; Yuyan Han 1; Ning Wang 1; Zhaorong Yang 2
刊名	APPLIED PHYSICS LETTERS
	2014
卷号	105 期号:6 页码:063109
内容类型	期刊论文
源URL	[http://ir.hfcas.ac.cn/handle/334002/21055]
专题	合肥物质科学研究院_中科院强磁场科学中心
作者单位	1.High Magnetic Field Laboratory, Chinese Academy of Sciences, Hefei 230031, Anhui, China 2.Institute of Solid State Physics, Chinese Academy of Sciences, Heifei 230031, Anhui, China
推荐引用方式 GB/T 7714	Jiyong Yang,Weike Wang,Yan Liu,et al. Thickness dependence of the charge-density-wave transition temperature in VSe2[J]. APPLIED PHYSICS LETTERS,2014,105(6):063109.
APA	Jiyong Yang.,Weike Wang.,Yan Liu.,Haifeng Du.,Wei Ning.,...&Yuheng Zhang.(2014).Thickness dependence of the charge-density-wave transition temperature in VSe2.APPLIED PHYSICS LETTERS,105(6),063109.
MLA	Jiyong Yang,et al."Thickness dependence of the charge-density-wave transition temperature in VSe2".APPLIED PHYSICS LETTERS 105.6(2014):063109.