Comparative study of electrical characteristics for n-type 4H–SiC planar and trench MOS capacitors annealed in ambient NO

	Comparative study of electrical characteristics for n-type 4H–SiC planar and trench MOS capacitors annealed in ambient NO
	Zhan-Wei Shen; Feng Zhang; Sima Dimitrijev; Ji-Sheng Han; Guo-Guo Yan; Zheng-Xin Wen; Wan-Shun Zhao; Lei Wang; Xing-Fang Liu; Guo-Sheng Sun
刊名	Chinese Physics B
	2017
卷号	26 期号:10 页码:107101
学科主题	半导体材料
公开日期	2018-06-15
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/28603]
专题	半导体研究所_中科院半导体材料科学重点实验室
推荐引用方式 GB/T 7714	Zhan-Wei Shen,Feng Zhang,Sima Dimitrijev,et al. Comparative study of electrical characteristics for n-type 4H–SiC planar and trench MOS capacitors annealed in ambient NO[J]. Chinese Physics B,2017,26(10):107101.
APA	Zhan-Wei Shen.,Feng Zhang.,Sima Dimitrijev.,Ji-Sheng Han.,Guo-Guo Yan.,...&Yi-Ping Zeng.(2017).Comparative study of electrical characteristics for n-type 4H–SiC planar and trench MOS capacitors annealed in ambient NO.Chinese Physics B,26(10),107101.
MLA	Zhan-Wei Shen,et al."Comparative study of electrical characteristics for n-type 4H–SiC planar and trench MOS capacitors annealed in ambient NO".Chinese Physics B 26.10(2017):107101.