Threshold power of 1.2 mu m infrared laser by in-band pumped Ho3+ -doped crystal

CORC > 上海光学精密机械研究所 > 中国科学院上海光学精密机械研究所 > 空间激光信息技术研究中心

	Threshold power of 1.2 mu m infrared laser by in-band pumped Ho3+ -doped crystal
	Chen XY(陈秀艳); Zhang PX(张沛雄); Jiang HW(姜华卫); Hang Y(杭寅); Feng Y(冯衍)
刊名	红外与毫米波学报
	2017
卷号	36 期号:1 页码:20
通讯作者	haomisschen@163.com ; feng@siom.ac.cn
中文摘要	为探索同带泵浦掺杂Ho~(3+)激光晶体1.2 mum波段红外激光输出,采用掺杂浓度为1 at%的Ho~(3+):LLF激光晶体作为激光增益介质,应用两种典型准三能级理论模型,计算了Ho~(3+)在~5I_6和~5I_8能级间跃迁辐射1.19mum激光的阈值功率,分析了泵浦光和激光束腰半径、激光晶体长度、吸收损耗、腔镜反射率等参量与阈值功率的变化关系,得出了吸收损耗是影响阈值功率最敏感因素的重要结论,确定了泵浦阈值功率的范围,为后续1.2 mum波段红外激光实验研究提供了可靠的理论参考数据.
英文摘要	The threshold power of 1.2 mu m laser generated from the Ho3+ :LLF crystal was discussed. Two typical quasi-three-level theoretical models were used to analyze the effectiveness of 1194 nm laser threshold power in the in-band pumping source of 1.15, mu m fiber laser with different parameters, such as the absorption coefficient of laser medium, the laser beam radius, the crystal length and reflectivity of the output mirror. It was found that the re-absorption loss was the most important factor leading to the different results for the two models, and the second model was close to the practice because of the narrow bandwidth pumping beam( <6 nm). The results provided reliable data of Ho3+ -doped1.2 mu m solid-state laser systems for the design and experimental research in further.
收录类别	SCI
资助信息	National High-tech R & D Program of China (863 Program) [2015XXXXX]; National Natural Science Foundation of China [61603265]; Project of Shenyang Normal University [L201522]; Training Programs for College Students Innovation and Entrepreneurship [201630614171030]
WOS记录号	WOS:000395722400005
内容类型	期刊论文
源URL	[http://ir.siom.ac.cn/handle/181231/28441]
专题	上海光学精密机械研究所_空间激光信息技术研究中心
作者单位	中国科学院上海光学精密机械研究所
推荐引用方式 GB/T 7714	Chen XY,Zhang PX,Jiang HW,et al. Threshold power of 1.2 mu m infrared laser by in-band pumped Ho3+ -doped crystal[J]. 红外与毫米波学报,2017,36(1):20.
APA	陈秀艳,张沛雄,姜华卫,杭寅,&冯衍.(2017).Threshold power of 1.2 mu m infrared laser by in-band pumped Ho3+ -doped crystal.红外与毫米波学报,36(1),20.
MLA	陈秀艳,et al."Threshold power of 1.2 mu m infrared laser by in-band pumped Ho3+ -doped crystal".红外与毫米波学报 36.1(2017):20.