Effects of Mg doping in the quantum barriers on the efficiency droop of GaN based light emitting diodes

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	Effects of Mg doping in the quantum barriers on the efficiency droop of GaN based light emitting diodes
	Liu, Y; Yang, YC
刊名	CHINESE PHYSICS B
	2016-05
卷号	25 期号:5 页码:058101-1-058101-5
关键词	light emitting diodes droop Mg doping
ISSN号	1674-1056
通讯作者	Yang, YC (reprint author), Lanzhou Univ, Sch Resource & Environm Sci, Lanzhou 730000, Peoples R China. ; Yang, YC (reprint author), Key Lab West Chinas Enviromental Sci, Lanzhou 730000, Peoples R China.
学科主题	Physics
出版地	BRISTOL
语种	英语
WOS记录号	WOS:000375681800067
内容类型	期刊论文
源URL	[http://ir.lzu.edu.cn/handle/262010/182306]
专题	资源环境学院_期刊论文
推荐引用方式 GB/T 7714	Liu, Y,Yang, YC. Effects of Mg doping in the quantum barriers on the efficiency droop of GaN based light emitting diodes[J]. CHINESE PHYSICS B,2016,25(5):058101-1-058101-5.
APA	Liu, Y,&Yang, YC.(2016).Effects of Mg doping in the quantum barriers on the efficiency droop of GaN based light emitting diodes.CHINESE PHYSICS B,25(5),058101-1-058101-5.
MLA	Liu, Y,et al."Effects of Mg doping in the quantum barriers on the efficiency droop of GaN based light emitting diodes".CHINESE PHYSICS B 25.5(2016):058101-1-058101-5.