Physical effect on transition from blocking to conducting state of barrier-type thyristor

	Physical effect on transition from blocking to conducting state of barrier-type thyristor
	Li HR(李海蓉); Li SY(李思渊)
刊名	半导体学报/Journal of Semiconductors
	2010-12-15
卷号	31 期号:12 页码:33-37
关键词	barrier-type thyristor negative differential resistance physical effect conductance modulation
ISSN号	16744926
通讯作者	Hairong, L. (hrli@lzu.edu.cn)
学科主题	701.1 Electricity: Basic Concepts and Phenomena;706.2 Electric Power Lines and Equipment;714.2 Semiconductor Devices and Integrated Circuits;716 Telecommunication; Radar, Radio and Television;717 Optical Communication;718 Telephone Systems and Related Technologies; Line Communications
语种	英语
内容类型	期刊论文
源URL	[http://ir.lzu.edu.cn/handle/262010/178109]
专题	物理科学与技术学院_期刊论文
推荐引用方式 GB/T 7714	Li HR,Li SY. Physical effect on transition from blocking to conducting state of barrier-type thyristor[J]. 半导体学报/Journal of Semiconductors,2010,31(12):33-37.
APA	李海蓉,&李思渊.(2010).Physical effect on transition from blocking to conducting state of barrier-type thyristor.半导体学报/Journal of Semiconductors,31(12),33-37.
MLA	李海蓉,et al."Physical effect on transition from blocking to conducting state of barrier-type thyristor".半导体学报/Journal of Semiconductors 31.12(2010):33-37.