Feasibility study of using a Zener diode as the selection device for bipolar RRAM and WORM memory arrays

	Feasibility study of using a Zener diode as the selection device for bipolar RRAM and WORM memory arrays
	Li, YT; Fu, LP; Tao, CL; Jiang, XY; Sun, PX
刊名	JOURNAL OF PHYSICS D-APPLIED PHYSICS
	2014-01-15
卷号	47 期号:2 页码:-
关键词	zener diode bipolar RRAM WORM memory cross-bar array
ISSN号	0022-3727
通讯作者	Li, YT (reprint author), Lanzhou Univ, Key Lab Magnetism & Magnet Mat, Minist Educ, Lanzhou 730000, Peoples R China.
学科主题	Physics
语种	英语
WOS记录号	WOS:000329108000007
内容类型	期刊论文
源URL	[http://202.201.7.4/handle/262010/106011]
专题	物理科学与技术学院_期刊论文
推荐引用方式 GB/T 7714	Li, YT,Fu, LP,Tao, CL,et al. Feasibility study of using a Zener diode as the selection device for bipolar RRAM and WORM memory arrays[J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS,2014,47(2):-.
APA	Li, YT,Fu, LP,Tao, CL,Jiang, XY,&Sun, PX.(2014).Feasibility study of using a Zener diode as the selection device for bipolar RRAM and WORM memory arrays.JOURNAL OF PHYSICS D-APPLIED PHYSICS,47(2),-.
MLA	Li, YT,et al."Feasibility study of using a Zener diode as the selection device for bipolar RRAM and WORM memory arrays".JOURNAL OF PHYSICS D-APPLIED PHYSICS 47.2(2014):-.