Investigation of resistive switching behaviours in WO3-based RRAM devices

	Investigation of resistive switching behaviours in WO3-based RRAM devices
	Li, YT; Long, SB; Lu, HB; Liu, Q; Wang, Q; Wang, Y; Zhang, S; Lian, WT; Liu, S; Liu, M
刊名	CHINESE PHYSICS B
	2011-01
卷号	20 期号:1 页码:-
关键词	resistive random access memory resistive switching nonvolatile WO3
ISSN号	1674-1056
其他题名	Investigation of resistive switching behaviours in WO_3-based RRAM devices
通讯作者	Liu, S (reprint author), Lanzhou Univ, Inst Microelect, Sch Phys Sci & Technol, Lanzhou 730000, Peoples R China.
学科主题	Physics
语种	英语
WOS记录号	WOS:000286676000087
内容类型	期刊论文
源URL	[http://202.201.7.4/handle/262010/105150]
专题	物理科学与技术学院_期刊论文
推荐引用方式 GB/T 7714	Li, YT,Long, SB,Lu, HB,et al. Investigation of resistive switching behaviours in WO3-based RRAM devices[J]. CHINESE PHYSICS B,2011,20(1):-.
APA	Li, YT.,Long, SB.,Lu, HB.,Liu, Q.,Wang, Q.,...&Liu, M.(2011).Investigation of resistive switching behaviours in WO3-based RRAM devices.CHINESE PHYSICS B,20(1),-.
MLA	Li, YT,et al."Investigation of resistive switching behaviours in WO3-based RRAM devices".CHINESE PHYSICS B 20.1(2011):-.