The influence of H-2/Ar ratio on Ge content of the mu c-SiGe:H films deposited by PECVD

	The influence of H-2/Ar ratio on Ge content of the mu c-SiGe:H films deposited by PECVD
	Tang, ZG; Wang, WB; Wang, DS; Liu, DQ; Liu, QM; He, DY
刊名	JOURNAL OF ALLOYS AND COMPOUNDS
	2010-08-20
卷号	504 期号:2 页码:403-406
关键词	Microcrystalline silicon germanium films PECVD H-2/Ar Optoelectronic properties
ISSN号	0925-8388
通讯作者	He, DY (reprint author), Lanzhou Univ, Dept Phys, Lanzhou 730000, Peoples R China.
学科主题	Chemistry; Materials Science; Metallurgy & Metallurgical Engineering
语种	英语
WOS记录号	WOS:000281019900029
内容类型	期刊论文
源URL	[http://202.201.7.4/handle/262010/105051]
专题	物理科学与技术学院_期刊论文
推荐引用方式 GB/T 7714	Tang, ZG,Wang, WB,Wang, DS,et al. The influence of H-2/Ar ratio on Ge content of the mu c-SiGe:H films deposited by PECVD[J]. JOURNAL OF ALLOYS AND COMPOUNDS,2010,504(2):403-406.
APA	Tang, ZG,Wang, WB,Wang, DS,Liu, DQ,Liu, QM,&He, DY.(2010).The influence of H-2/Ar ratio on Ge content of the mu c-SiGe:H films deposited by PECVD.JOURNAL OF ALLOYS AND COMPOUNDS,504(2),403-406.
MLA	Tang, ZG,et al."The influence of H-2/Ar ratio on Ge content of the mu c-SiGe:H films deposited by PECVD".JOURNAL OF ALLOYS AND COMPOUNDS 504.2(2010):403-406.