Preparation of cubic boron nitride films by radio frequency sputtering

	Preparation of cubic boron nitride films by radio frequency sputtering
	Tian, L; Ding, Y; Chen, H; Liu, JK; Deng, JX; He, DY; Chen, GH
刊名	ACTA PHYSICA SINICA/物理学报
	2006-10
卷号	55 期号:10 页码:5441-5443
关键词	cubic boron nitride radio frequency sputtering compressive stress negative substrate bias
ISSN号	1000-3290
其他题名	用射频溅射法制备立方氮化硼薄膜
通讯作者	Chen, GH (reprint author), Beijing Polytech Univ, Dept Appl Phys, Beijing 100022, Peoples R China.
中文摘要	利用射频溅射方法在n型Si(111)衬底上制备出立方相含量接近100%且粘附性较高的立方氮化硼(c-BN)薄膜.傅里叶变换红外谱(FTIR)的结果表明,基底负偏压对薄膜立方相含量和薄膜压应力有很大影响,另外,衬底的电阻率对c-BN生长和薄膜的压应力也有一定的影响.
学科主题	Physics
语种	中文
WOS记录号	WOS:000241215200076
内容类型	期刊论文
源URL	[http://202.201.7.4/handle/262010/104136]
专题	物理科学与技术学院_期刊论文
推荐引用方式 GB/T 7714	Tian, L,Ding, Y,Chen, H,et al. Preparation of cubic boron nitride films by radio frequency sputtering[J]. ACTA PHYSICA SINICA/物理学报,2006,55(10):5441-5443.
APA	Tian, L.,Ding, Y.,Chen, H.,Liu, JK.,Deng, JX.,...&Chen, GH.(2006).Preparation of cubic boron nitride films by radio frequency sputtering.ACTA PHYSICA SINICA/物理学报,55(10),5441-5443.
MLA	Tian, L,et al."Preparation of cubic boron nitride films by radio frequency sputtering".ACTA PHYSICA SINICA/物理学报 55.10(2006):5441-5443.