Electronic properties of MoS2 on monolayer, bilayer and bulk SiC: A density functional theory study

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	Electronic properties of MoS2 on monolayer, bilayer and bulk SiC: A density functional theory study
	Zan, WY; Geng, W; Liu, HX; Yao, XJ
刊名	JOURNAL OF ALLOYS AND COMPOUNDS
	2016-05-05
卷号	666 页码:204-208
关键词	Molybdenum disulfide Silicon carbide Density functional theory
ISSN号	0925-8388
其他题名	Electronic properties of MoS2on monolayer, bilayer and bulk SiC: A density functional theory study
通讯作者	Yao, XJ (reprint author), Lanzhou Univ, Dept Chem, State Key Lab Appl Organ Chem, Lanzhou 730000, Peoples R China.
学科主题	Chemistry; Materials Science; Metallurgy & Metallurgical Engineering
语种	英语
WOS记录号	WOS:000369581800028
内容类型	期刊论文
源URL	[http://ir.lzu.edu.cn/handle/262010/180433]
专题	化学化工学院_期刊论文
推荐引用方式 GB/T 7714	Zan, WY,Geng, W,Liu, HX,et al. Electronic properties of MoS2 on monolayer, bilayer and bulk SiC: A density functional theory study[J]. JOURNAL OF ALLOYS AND COMPOUNDS,2016,666:204-208.
APA	Zan, WY,Geng, W,Liu, HX,&Yao, XJ.(2016).Electronic properties of MoS2 on monolayer, bilayer and bulk SiC: A density functional theory study.JOURNAL OF ALLOYS AND COMPOUNDS,666,204-208.
MLA	Zan, WY,et al."Electronic properties of MoS2 on monolayer, bilayer and bulk SiC: A density functional theory study".JOURNAL OF ALLOYS AND COMPOUNDS 666(2016):204-208.