Partial Oxidized Arsenene: Emerging Tunable Direct Bandgap Semiconductor

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	Partial Oxidized Arsenene: Emerging Tunable Direct Bandgap Semiconductor
	Wang, YJ; Zhou, KG; Yu, GL; Zhong, X; Zhang, HL
刊名	SCIENTIFIC REPORTS
	2016-04-26
卷号	6
ISSN号	2045-2322
通讯作者	Zhou, KG (reprint author), Univ Manchester, Sch Phys & Astron, Manchester M13 9PL, Lancs, England.
学科主题	Science & Technology - Other Topics
语种	英语
WOS记录号	WOS:000374761700002
内容类型	期刊论文
源URL	[http://ir.lzu.edu.cn/handle/262010/180415]
专题	化学化工学院_期刊论文
推荐引用方式 GB/T 7714	Wang, YJ,Zhou, KG,Yu, GL,et al. Partial Oxidized Arsenene: Emerging Tunable Direct Bandgap Semiconductor[J]. SCIENTIFIC REPORTS,2016,6.
APA	Wang, YJ,Zhou, KG,Yu, GL,Zhong, X,&Zhang, HL.(2016).Partial Oxidized Arsenene: Emerging Tunable Direct Bandgap Semiconductor.SCIENTIFIC REPORTS,6.
MLA	Wang, YJ,et al."Partial Oxidized Arsenene: Emerging Tunable Direct Bandgap Semiconductor".SCIENTIFIC REPORTS 6(2016).