Nanoscale semiconductor Pb1-xSnxSe (x=0.2) thin films synthesized by electrochemical atomic layer deposition

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	Nanoscale semiconductor Pb1-xSnxSe (x=0.2) thin films synthesized by electrochemical atomic layer deposition
刊名	APPLIED SURFACE SCIENCE
	2011-04-15
卷号	257 期号:13
关键词	Pb1-xSnxSe Gold substrate EC-ALD UPD Photoelectric switch
ISSN号	0169-4332
通讯作者	Wang, CM (reprint author), Lanzhou Univ, Dept Chem, Lanzhou 730000, Peoples R China.
学科主题	Chemistry ; Materials Science ; Physics
资助信息	National Natural Science Foundation of China [51072073, 20775030]
语种	英语
WOS记录号	WOS:000288205800056
内容类型	期刊论文
源URL	[http://202.201.7.4:8080/handle/262010/76014]
专题	化学化工学院_期刊论文
推荐引用方式 GB/T 7714	. Nanoscale semiconductor Pb1-xSnxSe (x=0.2) thin films synthesized by electrochemical atomic layer deposition[J]. APPLIED SURFACE SCIENCE,2011,257(13).
APA	(2011).Nanoscale semiconductor Pb1-xSnxSe (x=0.2) thin films synthesized by electrochemical atomic layer deposition.APPLIED SURFACE SCIENCE,257(13).
MLA	"Nanoscale semiconductor Pb1-xSnxSe (x=0.2) thin films synthesized by electrochemical atomic layer deposition".APPLIED SURFACE SCIENCE 257.13(2011).