Investigating the Mechanism of Hysteresis Effect in Graphene Electrical Field Device Fabricated on SiO2 Substrates using Raman Spectroscopy

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	Investigating the Mechanism of Hysteresis Effect in Graphene Electrical Field Device Fabricated on SiO2 Substrates using Raman Spectroscopy
刊名	SMALL
	2012-09-24
卷号	8 期号:18
关键词	graphene field-effect transistors hysteresis effects electrochemical doping H2O O2 redox couple Raman spectroscopy
ISSN号	1613-6810
通讯作者	Zhang, J (reprint author), Peking Univ, Coll Chem & Mol Engn,Ctr Nanochem, State Key Lab Struct Chem Unstable & Stable Speci, Key Lab Phys & Chem Nanodevices,Beijing Natl Lab, Beijing 100871, Peoples R China.
学科主题	Chemistry ; Science & Technology - Other Topics ; Materials Science ; Physics
资助信息	MOST [2006CB932701, 2006CB932403, 2007CB936203]; NSFC [10774006, 50972001, 20725307, 50821061]; Fundamental Research Funds for the Central Universities
语种	英语
WOS记录号	WOS:000308874900008
内容类型	期刊论文
源URL	[http://202.201.7.4:8080/handle/262010/75017]
专题	化学化工学院_期刊论文
推荐引用方式 GB/T 7714	. Investigating the Mechanism of Hysteresis Effect in Graphene Electrical Field Device Fabricated on SiO2 Substrates using Raman Spectroscopy[J]. SMALL,2012,8(18).
APA	(2012).Investigating the Mechanism of Hysteresis Effect in Graphene Electrical Field Device Fabricated on SiO2 Substrates using Raman Spectroscopy.SMALL,8(18).
MLA	"Investigating the Mechanism of Hysteresis Effect in Graphene Electrical Field Device Fabricated on SiO2 Substrates using Raman Spectroscopy".SMALL 8.18(2012).