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	InGaN/GaN岛形量子阱样品透射电镜制样与表征方法; TEM sample preparation and characterization of In GaN / GaN quantum wells on island structure
	杨晓东
	2014-12-15
关键词	透射电镜 样品制备 微观结构 量子阱 白光发射 TEM sample preparation microstructure quantum wells white light emission
英文摘要	本文研究了氮化物半导体三维岛形结构的透射电镜制样技术,减小了样品在制样过程中的结构损伤,并对In gA n/gA n量子阱进行了结构、成分和发光特性的表征。通过对三维gA n小岛非极性小面微观结构的分析,确定了侧壁小面皆为半极性面,说明小面生长的In gA n/gA n量子阱受到较小的极化效应影响。该岛形量子阱的结构特征,有效地增强了量子阱的发光效率,同时由于不同小面的存在,实现了同一小岛的多波长白光发射。; This article studied the TEM sample preparation technique of the 3-D islands structure of Group-III nitride semiconductor materials,which reduced the structural damage in the process of the sample preparation,and characterized the structure,composition and luminescent properties of the In Ga N / Ga N quantum wells.Through microstructure analysis of nonpolar facets of 3-D Ga N islands,It could be confirmed that all the sidewalls facets were half-polar facets,indicating that the In Ga N / Ga N quantum wells on the facets were affected by the weakening of the polarization effect.The 3-D islands structural characteristics effectively enhanced the quantum wells light-emitting efficiency.What's more,due to the existence of different facets,multi-wavelength white light emission of the same island was realized.; 国家自然科学基金资助项目(No.61076091)
语种	zh_CN
内容类型	期刊论文
源URL	[http://dspace.xmu.edu.cn/handle/2288/118841]
专题	萨本栋－已发表论文
推荐引用方式 GB/T 7714	杨晓东. InGaN/GaN岛形量子阱样品透射电镜制样与表征方法, TEM sample preparation and characterization of In GaN / GaN quantum wells on island structure[J],2014.
APA	杨晓东.(2014).InGaN/GaN岛形量子阱样品透射电镜制样与表征方法..
MLA	杨晓东."InGaN/GaN岛形量子阱样品透射电镜制样与表征方法".(2014).

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