| Si基多层Ge量子点近红外光电探测器研制; Study of Si-Based Multilayer Ge Quantum Dots Near-Infrared Photodetector | |
| 汪建元 ; 陈松岩 ; 李成 | |
| 2015-05-15 | |
| 关键词 | 多层Ge量子点 近红外光电探测器 UHV/CVD系统 自组织生长 multilayer Ge QDs near-infrared photodetector UHV / CVD system self-assembled growth |
| 英文摘要 | 采用超高真空化学气相沉积(uHV/CVd)技术在SI衬底上外延生长了PIn结构多层gE量子点探测器材料。PIn探测器结构由n型SI衬底,多层gE量子点吸收区,和原位掺杂P型SI盖层构成,电极分别制作于n-SI和P-SI上,以获得好的欧姆接触。制备的SI基gE量子点光电探测器具有较低的暗电流密度(-1 V偏压下为7.35x10-6A/CM2),与SI相比,探测波长延伸到1.31μM波段。; The structure of multilayer Ge quantum dots( QDs) was eptaxial grown on Si substrate by ultra-high vacuum chemical vapor deposition( UHV / CVD) technique for detector fabrication.The intrinsic multilayer Ge QDs were acted as an absorption region,while the N-Si substrate and the in situ capped P-Si layer were chosen for the formation of ohmic contact.The fabricated photodetector has a low dark current density( 7.35 × 10- 6A / cm2at- 1 V),and the wavelength limit is extended to 1.31 μm compared with Si photodetector.; 国家重大科学研究计划(2012CB933503) |
| 语种 | zh_CN |
| 内容类型 | 期刊论文 |
| 源URL | [http://dspace.xmu.edu.cn/handle/2288/105878]  |
| 专题 | 航空航天－已发表论文 |
| 推荐引用方式 GB/T 7714 | 汪建元,陈松岩,李成. Si基多层Ge量子点近红外光电探测器研制, Study of Si-Based Multilayer Ge Quantum Dots Near-Infrared Photodetector[J],2015. |
| APA | 汪建元,陈松岩,&李成.(2015).Si基多层Ge量子点近红外光电探测器研制.. |
| MLA | 汪建元,et al."Si基多层Ge量子点近红外光电探测器研制".(2015). |
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