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	High temperature annealing amorphous hydrogenated SiC films for the application as window layers in Si-based solar cell
	Hong, Rong Dun ; Chen, Xia Ping ; Huang, Qian ; Xie, Yan Nan ; Wu, Shao Xiong ; Zhang, Zi Feng ; Wu, Zheng Yun ; Hong RD(洪荣墩) ; Wu ZY(吴正云)
	2013
关键词	Amorphous films Annealing Chemical vapor deposition Manufacture Optical properties Plasma enhanced chemical vapor deposition Refractive index Silicon Silicon carbide Solar cells Vapors
英文摘要	Conference Name:3rd International Conference on Frontiers of Manufacturing Science and Measuring Technology, ICFMM 2013. Conference Address: LiJiang, China. Time:July 30, 2013 - July 31, 2013.; Control Engineering and Information Science; Research Association; International Frontiers of science and technology; Research Association; Trans Tech Publications; Chin-Yi University of Technology; Amorphous hydrogenated silicon carbide (a-Si1-xCx:H) films were deposited by plasma enhanced chemical vapor deposition and subsequently annealed in N2 atmosphere at 1100 °C. The effects of high temperature annealing on the film's optical and structural properties were systematically analyzed. It was noted that after high temperature annealing, amount of Si-C bonds increased significantly and SiC nanocrystalline was formed on the surface of the film, which resulted in an increasing refractive index in wavelength range of visible light, a decreasing absorbance index (wavelength1-xCx:H window layer could be improved by high temperature annealing. ? (2013) Trans Tech Publications, Switzerland.
语种	英语
出处	http://dx.doi.org/10.4028/www.scientific.net/AMM.401-403.631
出版者	Trans Tech Publications Ltd
内容类型	其他
源URL	[http://dspace.xmu.edu.cn/handle/2288/86186]
专题	物理技术－会议论文
推荐引用方式 GB/T 7714	Hong, Rong Dun,Chen, Xia Ping,Huang, Qian,et al. High temperature annealing amorphous hydrogenated SiC films for the application as window layers in Si-based solar cell. 2013-01-01.

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