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	Time-resolved photoluminescence spectra of self-assembled InAs/GaAs quantum dots
	Kong, LM ; Cai, JF ; Wu, ZY ; Gong, Z ; Niu, ZC ; Feng, ZC ; Wu ZY(吴正云)
	2006-03-01
关键词	1.3 MU-M DEPENDENT RADIATIVE DECAY THERMAL REDISTRIBUTION EXCITONS RECOMBINATION RELAXATION LIFETIMES EMISSION EPITAXY LASERS
英文摘要	Conference Name:3rd Asian Conference on Chemical Vapor Deposition. Conference Address: Taipei, TAIWAN. Time:NOV 12-14, 2004.; Two types of InAs self-assembled Quantum dots (QDs) were prepared by Molecular beam epitaxy. Atomic force microscopy (AFM) measurements showed that, compared to QDs grown on GaAs substrate, QDs grown on InGaAs layer has a significantly enhanced density. The short spacing (several nanometer) among QDs stimulates strong coupling and leads to a large red-shift of the 1.3 mu m photoluminescence (PL) peak. We study systematically the dependence of PL lifetime on the QDs size, density and temperature (1). We found that, below 50 K, the PL lifetime is insensitive to temperature, which is interpreted from the localization effects. As T increases, the PL lifetime increases, which can be explained from the competition between the carrier redistribution and thermal emission at higher temperature. The increase of carriers in QDs migrated from barriers and wetting layer (WL), and the redistribution of carriers among QDs enhance the PL lifetime as T increases. The thermal emission and non-radiative recombination have effects to reduce the PL lifetime at higher T. As a result, the radiative recombination lifetime is determined by the wave function overlapping of electrons and holes in QDs, and QDs with different densities have different PL lifetime dependence on the QDs size. (c) 2005 Elsevier B.V. All rights reserved.
语种	英语
出处	http://dx.doi.org/10.1016/j.tsf.2005.07.079
出版者	THIN SOLID FILMS
内容类型	其他
源URL	[http://dspace.xmu.edu.cn/handle/2288/86090]
专题	物理技术－会议论文
推荐引用方式 GB/T 7714	Kong, LM,Cai, JF,Wu, ZY,et al. Time-resolved photoluminescence spectra of self-assembled InAs/GaAs quantum dots. 2006-03-01.

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