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	The effects of oxygen vacancies on the electronic properties of V(2)O(5-x)
	Li, Zhi-Yang ; Wu, Qi-Hui ; Li ZY(李志阳)
	2008-12
关键词	VANADIUM-OXIDES PHOTOEMISSION-SPECTROSCOPY THIN-FILMS PHOTOELECTRON INTERCALATION CATALYSTS SURFACE
英文摘要	Conference Name:12th International Conference on Defects-Recognition, Imaging and Physics in Semiconductors. Conference Address: Berlin, GERMANY. Time:SEP 09-13, 2007.; The influences of oxygen vacancies on the electronic properties of V(2)O(5-x) have been investigated by photoelectron spectroscopy and first principle calculations. Photoelectron spectroscopic data suggested that the vanadium (V) ions are gradually reduced to lower oxidation states with the increases of oxygen (O) vacancy density. Simultaneously, the formation of O vacancies leads to a decrease in the work function of V(2)O(5-x) . Theoretical calculations further prove that the formation of O vacancies would cause a reduction in the charge state of V ions and a decrease of work function. The electronic structures of V ions are strongly modified by the removal of O ions nearby due to electron transfer to the 3d orbitals of the V ions.
语种	英语
出处	http://dx.doi.org/10.1007/s10854-007-9506-z
出版者	J MATER SCI-MATER EL
内容类型	其他
源URL	[http://dspace.xmu.edu.cn/handle/2288/86070]
专题	物理技术－会议论文
推荐引用方式 GB/T 7714	Li, Zhi-Yang,Wu, Qi-Hui,Li ZY. The effects of oxygen vacancies on the electronic properties of V(2)O(5-x). 2008-12-01.

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