QQ客服 官方微博 反馈留言

	4H-SiC wafers studied by X-ray absorption and Raman scattering
	Xu, Qiang ; Sun, Hua Yang ; Chen, Cheng ; Jang, Ling-Yun ; Rusli ; Mendis, Suwan P. ; Tin, Chin Che ; Qiu, Zhi Ren ; Wu, Zhengyun ; Liu, Chee Wee ; Feng, Zhe Chuan ; Wu ZY(吴正云)
	2012
英文摘要	Conference Name:14th International Conference on Silicon Carbide and Related Materials (ICSCRM 2011). Conference Address: Cleveland, OH. Time:SEP 11-16, 2011.; Synchrotron radiation X-ray absorption and UV 325 nm excitation Raman scattering-photoluminescence (PL) have been employed to investigate a series of 4H-SiC wafers, including bulk, epitaxial single or multiple layer structures grown by chemical vapor deposition. Significant results on the atomic bonding and PL-Raman properties are obtained from these comparative studies.
语种	英语
出处	http://dx.doi.org/10.4028/www.scientific.net/MSF.717-720.509
出版者	MATER SCI FORUM
内容类型	其他
源URL	[http://dspace.xmu.edu.cn/handle/2288/85932]
专题	物理技术－会议论文
推荐引用方式 GB/T 7714	Xu, Qiang,Sun, Hua Yang,Chen, Cheng,et al. 4H-SiC wafers studied by X-ray absorption and Raman scattering. 2012-01-01.

个性服务

查看访问统计

相关权益政策

暂无数据

收藏/分享

除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。