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	Tuning the indirect-direct band gap transition of SiC, GeC and SnC monolayer in a graphene-like honeycomb structure by strain engineering: A quasiparticle GW study
	L眉, Tie-Yu ; Liao, Xia-Xia ; Wang, Hui-Qion ; Zheng, Jin-Che ; Wang HQ(王惠琼) ; Zheng JC(郑金成)
刊名	http://dx.doi.org/10.1039/c2jm30915g
	2012
关键词	Density functional theory Energy gap Graphene Honeycomb structures Monolayers Silicon carbide
英文摘要	We have calculated the electronic properties of graphene and SiC, GeC and SnC monolayers in a two-dimensional graphene-like honeycomb structure under various strained conditions using first principles calculations based on density functional theory and the quasiparticle GW approximation. Our results show that the indirect-direct band gap transition of group-IV carbides can be tuned by strain, which indicates a possible new route for tailoring the electronic properties of ultrathin nanofilms through strain engineering. 漏 2012 The Royal Society of Chemistry.
语种	英语
出版者	Royal Society of Chemistry
内容类型	期刊论文
源URL	[http://dspace.xmu.edu.cn/handle/2288/92127]
专题	物理技术－已发表论文
推荐引用方式 GB/T 7714	L眉, Tie-Yu,Liao, Xia-Xia,Wang, Hui-Qion,et al. Tuning the indirect-direct band gap transition of SiC, GeC and SnC monolayer in a graphene-like honeycomb structure by strain engineering: A quasiparticle GW study[J]. http://dx.doi.org/10.1039/c2jm30915g,2012.
APA	L眉, Tie-Yu,Liao, Xia-Xia,Wang, Hui-Qion,Zheng, Jin-Che,王惠琼,&郑金成.(2012).Tuning the indirect-direct band gap transition of SiC, GeC and SnC monolayer in a graphene-like honeycomb structure by strain engineering: A quasiparticle GW study.http://dx.doi.org/10.1039/c2jm30915g.
MLA	L眉, Tie-Yu,et al."Tuning the indirect-direct band gap transition of SiC, GeC and SnC monolayer in a graphene-like honeycomb structure by strain engineering: A quasiparticle GW study".http://dx.doi.org/10.1039/c2jm30915g (2012).

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