Defect suppression in AlN epilayer using hierarchical growth units

CORC > 厦门大学 > 物理技术－已发表论文

	Defect suppression in AlN epilayer using hierarchical growth units
	Zhuang, Qi ; Lin, Wei ; Yang, Weihuang ; Yang, Wencao ; Huang, Chengcheng ; Li, Jinchai ; Chen, Hangyang ; Li, Shuping ; Kang, Junyong ; Chen HY(陈航洋) ; Kang JY(康俊勇)
刊名	http://dx.doi.org/10.1021/jp401745v
	2013-07-11
关键词	Atomic force microscopy Defects Grain boundaries Luminescence Vapors
英文摘要	Growing AlN layers remains a significant challenge because it is subject to a large volume fraction of grain boundaries. In this study, the nature and formation of the AlN growth mechanism is examined by ab initio simulations and experimental demonstration. The calculated formation enthalpies of the constituent elements, including the Al/N atom, Al-N molecule, and Al-N 3 cluster, vary with growth conditions in N-rich and Al-rich environments. Using the calculation results as bases, we develop a three-step metalorganic vapor-phase epitaxy, which involves the periodic growth sequence of (i) trimethylaluminum (TMAl), (ii) ammonia (NH3), and (iii) TMAl+NH3 supply, bringing in hierarchical growth units to improve AlN layer compactness. A series of AlN samples were grown, and their morphological and luminescent evolutions were evaluated by atomic force microscopy and cathodoluminescence, respectively. The proposed technique is advantageous because the boundaries and defect-related luminescence derived are highly depressed, serving as a productive platform from which to further optimize the properties of AlGaN semiconductors. ? 2013 American Chemical Society.
语种	英语
出版者	American Chemical Society
内容类型	期刊论文
源URL	[http://dspace.xmu.edu.cn/handle/2288/91958]
专题	物理技术－已发表论文
推荐引用方式 GB/T 7714	Zhuang, Qi,Lin, Wei,Yang, Weihuang,et al. Defect suppression in AlN epilayer using hierarchical growth units[J]. http://dx.doi.org/10.1021/jp401745v,2013.
APA	Zhuang, Qi.,Lin, Wei.,Yang, Weihuang.,Yang, Wencao.,Huang, Chengcheng.,...&康俊勇.(2013).Defect suppression in AlN epilayer using hierarchical growth units.http://dx.doi.org/10.1021/jp401745v.
MLA	Zhuang, Qi,et al."Defect suppression in AlN epilayer using hierarchical growth units".http://dx.doi.org/10.1021/jp401745v (2013).