Control of two-dimensional growth of AlN and high Al-content AlGaN-based MQWs for deep-UV LEDs

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	Control of two-dimensional growth of AlN and high Al-content AlGaN-based MQWs for deep-UV LEDs
	Yang, Weihuang ; Li, Jinchai ; Lin, Wei ; Li, Shuping ; Chen, Hangyang ; Liu, Dayi ; Yang, Xu ; Kang, Junyong ; Chen HY(陈航洋) ; Kang JY(康俊勇)
刊名	http://dx.doi.org/10.1063/1.4804247
	2013
关键词	Light emitting diodes Sapphire Semiconductor quantum wells
英文摘要	Dense and atomically flat AlN film with root-mean-square roughness value of 0.32 nm was grown on sapphire substrate at a relatively lower temperature by using a three-step epitaxy technique. On the basis of this AlN template, AlGaN-based multiple quantum wells (MQWs) with atomically flat hetero-interfaces were epitaxially grown to suppress nonradiative recombination by introducing In as a surfactant during simultaneous source supply. As a result, single intense- and narrow-peaked photoluminescence was obtained from the MQWs. Finally, the deep ultraviolet light emitting diodes with well-behaved I-V characteristic and strong electroluminescence in the range of 256-312 nm were fabricated successfully. ? 2013 ? 2013 Author(s).
语种	英语
出版者	American Institute of Physics
内容类型	期刊论文
源URL	[http://dspace.xmu.edu.cn/handle/2288/91953]
专题	物理技术－已发表论文
推荐引用方式 GB/T 7714	Yang, Weihuang,Li, Jinchai,Lin, Wei,et al. Control of two-dimensional growth of AlN and high Al-content AlGaN-based MQWs for deep-UV LEDs[J]. http://dx.doi.org/10.1063/1.4804247,2013.
APA	Yang, Weihuang.,Li, Jinchai.,Lin, Wei.,Li, Shuping.,Chen, Hangyang.,...&康俊勇.(2013).Control of two-dimensional growth of AlN and high Al-content AlGaN-based MQWs for deep-UV LEDs.http://dx.doi.org/10.1063/1.4804247.
MLA	Yang, Weihuang,et al."Control of two-dimensional growth of AlN and high Al-content AlGaN-based MQWs for deep-UV LEDs".http://dx.doi.org/10.1063/1.4804247 (2013).