Broadband Light Emission from Chirped Multiple InAs Quantum Dot Structure

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	Broadband Light Emission from Chirped Multiple InAs Quantum Dot Structure
	Lv Xue-Qin ; Jin Peng ; Chen Hong-Mei ; Wu Yan-Hua ; Wang Fei-Fei ; Wang Zhan-Guo ; Lv XQ(吕雪芹)
刊名	http://dx.doi.org/10.1088/0256-307X/30/11/118102
	2013
关键词	SUPERLUMINESCENT DIODES EMITTING-DIODES SPECTRUM LASER PERFORMANCE BANDWIDTH
英文摘要	National Natural Science Foundation of China [61274072, 60976057, 60876086]; Open Fund of Key Laboratory of Semiconductor Materials Science of Institute of Semiconductors, Chinese Academy of Sciences [KLSMS-1105]; Broadband light emission is obtained from a chirped multiple InAs/InGaAs/GaAs quantum dot (QD) structure. The thickness of the InGaAs strain-reducing layer (SRL) is used as the tuning parameter to adjust the light emission property of each QD layer in the chirped structure. It is shown from the photoluminescence (PL) measurement that the SRL thickness has a strong influence on the PL peak position, linewidth, and intensity. By constructing the chirped QD structure comprising five groups of QD layers with different SRL thicknesses, a broadband electroluminescence emission with the full width at half maximum of 202 nm is realized, indicating the feasibility of chirped multiple InAs QD layers on broadening the emission spectrum.
语种	英语
出版者	IOP PUBLISHING LTD
内容类型	期刊论文
源URL	[http://dspace.xmu.edu.cn/handle/2288/91801]
专题	物理技术－已发表论文
推荐引用方式 GB/T 7714	Lv Xue-Qin,Jin Peng,Chen Hong-Mei,et al. Broadband Light Emission from Chirped Multiple InAs Quantum Dot Structure[J]. http://dx.doi.org/10.1088/0256-307X/30/11/118102,2013.
APA	Lv Xue-Qin.,Jin Peng.,Chen Hong-Mei.,Wu Yan-Hua.,Wang Fei-Fei.,...&吕雪芹.(2013).Broadband Light Emission from Chirped Multiple InAs Quantum Dot Structure.http://dx.doi.org/10.1088/0256-307X/30/11/118102.
MLA	Lv Xue-Qin,et al."Broadband Light Emission from Chirped Multiple InAs Quantum Dot Structure".http://dx.doi.org/10.1088/0256-307X/30/11/118102 (2013).