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Symmetrically abrupt GaN/AlGaN superlattices by alternative interface-interruption scheme
Chen, Xiaohong ; Lin, Na ; Cai, Duanjun ; Zhang, Yong ; Chen, Hangyang ; Kang, Junyong ; Chen XH(陈小红) ; Cai DJ(蔡端俊) ; Zhang Y(张勇) ; Chen HY(陈航洋) ; Kang JY(康俊勇)
刊名http://dx.doi.org/10.1557/jmr.2012.432
2013
关键词MULTIPLE-QUANTUM WELLS III NITRIDE SEMICONDUCTORS LIGHT-EMITTING DEVICES GROWTH INTERRUPTION
英文摘要973 program [2012CB619301, 2011CB925600]; "863" program [2011AA03A111]; FRFCU [2012121011, 2011121042]; National Natural Science Foundation; Science & technology program of Fujian of China; Science & technology program of Xiamen of China; We report an alternative interruption scheme to effectively improve the abruptness of GaN/AlGaN superlattices by minimizing the asymmetric feature of different types of heterointerfaces. It is found by x-ray diffraction that the interface abruptness is degraded and the GaN thickness is reduced with the interruption time increasing. Detailed investigation with scanning transmission electron microscopy demonstrates that the Al diffusion and the interface etching effect at the GaN/AlGaN interface are the critical reasons leading to the interfacial asymmetry. An alternative interface-interruption scheme is then proposed to enhance the abruptness of the superlattice interfaces, and consequently, the emission efficiency can also be significantly enhanced.
语种英语
出版者CAMBRIDGE UNIV PRESS
内容类型期刊论文
源URL[http://dspace.xmu.edu.cn/handle/2288/91750]  
专题物理技术-已发表论文
推荐引用方式
GB/T 7714
Chen, Xiaohong,Lin, Na,Cai, Duanjun,et al. Symmetrically abrupt GaN/AlGaN superlattices by alternative interface-interruption scheme[J]. http://dx.doi.org/10.1557/jmr.2012.432,2013.
APA Chen, Xiaohong.,Lin, Na.,Cai, Duanjun.,Zhang, Yong.,Chen, Hangyang.,...&康俊勇.(2013).Symmetrically abrupt GaN/AlGaN superlattices by alternative interface-interruption scheme.http://dx.doi.org/10.1557/jmr.2012.432.
MLA Chen, Xiaohong,et al."Symmetrically abrupt GaN/AlGaN superlattices by alternative interface-interruption scheme".http://dx.doi.org/10.1557/jmr.2012.432 (2013).
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