High-reflectivity AlN/GaN distributed Bragg reflectors grown on sapphire substrates by MOCVD

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	High-reflectivity AlN/GaN distributed Bragg reflectors grown on sapphire substrates by MOCVD
	Wu, C. M. ; Zhang, B. P. ; Shang, J. Z. ; Cai, L. E. ; Zhang, J. Y. ; Yu, J. Z. ; Wang, Q. M. ; Zhang BP(张保平)
刊名	http://dx.doi.org/10.1088/0268-1242/26/5/055013
	2011-05-11
关键词	CHEMICAL-VAPOR-DEPOSITION MOLECULAR-BEAM EPITAXY PHASE EPITAXY MIRRORS GAN WAVELENGTHS
英文摘要	project of High Technology Research and Development of China [2006AA03Z409]; National Natural Science Foundation of China [10974165, 91023048]; High-reflectivity AlN/GaN distributed Bragg reflectors (DBRs) were grown on c-plane sapphire substrates by metalorganic chemical vapor deposition (MOCVD). A low temperature (LT) predeposition AlN layer and indium doping during the growth of the lambda/4 AlN layers were adopted to improve the quality of the DBR. During the growth of the DBR, the structural alternation occurred abruptly when an AlN layer was grown on a GaN layer but gradually in reverse order, which resulted in a stack of quasi-three-layer periodic arrangement rather than two-layer arrangement for one growth period. The peak reflectivity of DBRs reaches 99% at the designed wavelength. The root mean square (RMS) roughness of the surface is around 4 nm over a 10 mu m x 10 mu m surface area of the DBR. Meanwhile, the high-reflectivity (93%) and crack-free DBR with only 16-period AlN/GaN structures was obtained by employing an optimized AlN predeposition layer.
语种	英语
出版者	SEMICOND SCI TECH
内容类型	期刊论文
源URL	[http://dspace.xmu.edu.cn/handle/2288/91658]
专题	物理技术－已发表论文
推荐引用方式 GB/T 7714	Wu, C. M.,Zhang, B. P.,Shang, J. Z.,et al. High-reflectivity AlN/GaN distributed Bragg reflectors grown on sapphire substrates by MOCVD[J]. http://dx.doi.org/10.1088/0268-1242/26/5/055013,2011.
APA	Wu, C. M..,Zhang, B. P..,Shang, J. Z..,Cai, L. E..,Zhang, J. Y..,...&张保平.(2011).High-reflectivity AlN/GaN distributed Bragg reflectors grown on sapphire substrates by MOCVD.http://dx.doi.org/10.1088/0268-1242/26/5/055013.
MLA	Wu, C. M.,et al."High-reflectivity AlN/GaN distributed Bragg reflectors grown on sapphire substrates by MOCVD".http://dx.doi.org/10.1088/0268-1242/26/5/055013 (2011).