VALENCE-BAND OFFSETS AND BAND TAILORING IN COMPOUND STRAINED-LAYER SUPERLATTICES

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	VALENCE-BAND OFFSETS AND BAND TAILORING IN COMPOUND STRAINED-LAYER SUPERLATTICES
	Ke, S. H. ; Wang, R. Z. ; Huang, M. C. ; Huang MC(黄美纯)
刊名	http://dx.doi.org/10.1103/PhysRevB.49.10495
	1994-04-15
关键词	SEMICONDUCTOR HETEROJUNCTIONS DEFORMATION POTENTIALS ELECTRONIC-STRUCTURE SPECTROSCOPY INTERFACES LINEUPS INP
英文摘要	A numerical method, in which the average bond energy is considered as a reference level for determining the valence-band offset (VBO) in strained-layer superlattices (SLS's), is suggested and tested by performing ab initio electronic-structure calculations for the SLS's (InP)n/(InAs)n(001), (n=1,3,5), (GaP)1/(GaAs)1(001), (AlP)1/(AlAs)1(001), and (AlP)1/(InP)1(001). Based on this method, the VBO's of the SLS's composed of any two of the six compounds InP, InAs, GaP, GaAs, AlAs, and AlP under arbitrary elastic strain are determined systematically, and their strain-induced effects are discussed. Good agreement is found between the present results and the available experimental data.
语种	英语
内容类型	期刊论文
源URL	[http://dspace.xmu.edu.cn/handle/2288/70561]
专题	物理技术－已发表论文
推荐引用方式 GB/T 7714	Ke, S. H.,Wang, R. Z.,Huang, M. C.,et al. VALENCE-BAND OFFSETS AND BAND TAILORING IN COMPOUND STRAINED-LAYER SUPERLATTICES[J]. http://dx.doi.org/10.1103/PhysRevB.49.10495,1994.
APA	Ke, S. H.,Wang, R. Z.,Huang, M. C.,&黄美纯.(1994).VALENCE-BAND OFFSETS AND BAND TAILORING IN COMPOUND STRAINED-LAYER SUPERLATTICES.http://dx.doi.org/10.1103/PhysRevB.49.10495.
MLA	Ke, S. H.,et al."VALENCE-BAND OFFSETS AND BAND TAILORING IN COMPOUND STRAINED-LAYER SUPERLATTICES".http://dx.doi.org/10.1103/PhysRevB.49.10495 (1994).