Low-temperature direct wafer bonding of GaAs/InP

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	Low-temperature direct wafer bonding of GaAs/InP
	Xie, S. ; Chen, S. Y. ; Guo, W. L. ; Mao, W. ; Chen SY(陈松岩)
刊名	http://dx.doi.org/10.1016/j.spmi.2008.12.008
	2009-02
关键词	DIRECTLY-BONDED GAAS INP FUSION INTERFACE
英文摘要	An approach for low-temperature direct wafer bonding of GaAs/InP was presented. The bonding procedure was carried out at temperatures from 350 to 500 degrees C, and the bonded n-GaAs/n-InP specimens were obtained even at a temperature as low as 350 degrees C. The compositional profile on the GaAs/InP heterointerface was studied by X-ray photoelectron spectroscopy. The bonded interfacial properties were also characterized by current-voltage (I-V) and bonding strength measurement. The experimental results revealed an InGaAsP (or/and InGaAs) interlayer formed at the bonded interface, which influences the electrical property as well as the bonding strength. For the specimen bonded at 350 degrees C, the transport of major carriers could be explained by a tunneling effect. But the carrier transport was described by the thermionic emission theory for the specimen bonded at 450 degrees C. Finally, the mechanism of GaAs/InP bonding was discussed. (c) 2008 Elsevier Ltd. All rights reserved.
语种	英语
内容类型	期刊论文
源URL	[http://dspace.xmu.edu.cn/handle/2288/70229]
专题	物理技术－已发表论文
推荐引用方式 GB/T 7714	Xie, S.,Chen, S. Y.,Guo, W. L.,et al. Low-temperature direct wafer bonding of GaAs/InP[J]. http://dx.doi.org/10.1016/j.spmi.2008.12.008,2009.
APA	Xie, S.,Chen, S. Y.,Guo, W. L.,Mao, W.,&陈松岩.(2009).Low-temperature direct wafer bonding of GaAs/InP.http://dx.doi.org/10.1016/j.spmi.2008.12.008.
MLA	Xie, S.,et al."Low-temperature direct wafer bonding of GaAs/InP".http://dx.doi.org/10.1016/j.spmi.2008.12.008 (2009).