Enhanced photoluminescence of strained Ge with a delta-doping SiGe layer on silicon and silicon-on-insulator

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	Enhanced photoluminescence of strained Ge with a delta-doping SiGe layer on silicon and silicon-on-insulator
	Li, C. ; Chen, Y. H. ; Zhou, Z. W. ; Lai, H. K. ; Chen, S. Y. ; Chen SY(陈松岩)
刊名	http://dx.doi.org/10.1063/1.3275863
	2009-12-21
关键词	ROOM-TEMPERATURE GERMANIUM GAIN
英文摘要	National Basic Research Program of China (973 Program) [2007CB613404]; National Natural Science Foundation of China [60676027, 50672079, 60837001]; Program for New Century Excellent Talents in University; Open Project of State Key Laboratory of Functional; An enhancement of the direct bandgap photoluminescence from Ge layer on silicon with boron or phosphorous delta-doping SiGe layers at room temperature is reported. The n-type delta-doping SiGe layer is proposed to transfer extra electrons to L valley in Ge, which decreases the possibility of the excited electrons in the Gamma valley to be scattered to the L valley, and improve the photoluminescence of the direct band transition in the Ge layer. Additionally, 2.5 fold enhancement of luminescence from the strained Ge layer on a silicon-on-insulator substrate is demonstrated due to the resonant effect. This investigation is very promising for efficient Si-based Ge light emitting diodes compatible with silicon technology. (C) 2009 American Institute of Physics. [doi:10.1063/1.3275863]
语种	英语
内容类型	期刊论文
源URL	[http://dspace.xmu.edu.cn/handle/2288/70201]
专题	物理技术－已发表论文
推荐引用方式 GB/T 7714	Li, C.,Chen, Y. H.,Zhou, Z. W.,et al. Enhanced photoluminescence of strained Ge with a delta-doping SiGe layer on silicon and silicon-on-insulator[J]. http://dx.doi.org/10.1063/1.3275863,2009.
APA	Li, C.,Chen, Y. H.,Zhou, Z. W.,Lai, H. K.,Chen, S. Y.,&陈松岩.(2009).Enhanced photoluminescence of strained Ge with a delta-doping SiGe layer on silicon and silicon-on-insulator.http://dx.doi.org/10.1063/1.3275863.
MLA	Li, C.,et al."Enhanced photoluminescence of strained Ge with a delta-doping SiGe layer on silicon and silicon-on-insulator".http://dx.doi.org/10.1063/1.3275863 (2009).