InGaN/GaN quantum wells on self-organized faceted GaN islands: Growth and luminescence studies

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	InGaN/GaN quantum wells on self-organized faceted GaN islands: Growth and luminescence studies
	Fang, Z. L. ; Lin, Y. X. ; Kang, J. Y. ; Fang ZL(方志来)
刊名	http://dx.doi.org/10.1063/1.3554421
	2011-02-07
关键词	LIGHT-EMITTING-DIODES
英文摘要	National Natural Science Foundation of China [60876008, 61076091]; The growth behavior and luminescence properties of InGaN/GaN quantum wells (QW) on in situ self-organized GaN islands of various distinct smooth sidewall faceting are simultaneously investigated and directly compared. The QW thickness is found to be specific polar angle dependent, leading to variations in QW thickness on multifaceting islands. As a result, by color tuning through island shaping and modifications of the InGaN/GaN QWs on the faceted islands, polychromatic emissions are achieved. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3554421]
语种	英语
内容类型	期刊论文
源URL	[http://dspace.xmu.edu.cn/handle/2288/69289]
专题	物理技术－已发表论文
推荐引用方式 GB/T 7714	Fang, Z. L.,Lin, Y. X.,Kang, J. Y.,et al. InGaN/GaN quantum wells on self-organized faceted GaN islands: Growth and luminescence studies[J]. http://dx.doi.org/10.1063/1.3554421,2011.
APA	Fang, Z. L.,Lin, Y. X.,Kang, J. Y.,&方志来.(2011).InGaN/GaN quantum wells on self-organized faceted GaN islands: Growth and luminescence studies.http://dx.doi.org/10.1063/1.3554421.
MLA	Fang, Z. L.,et al."InGaN/GaN quantum wells on self-organized faceted GaN islands: Growth and luminescence studies".http://dx.doi.org/10.1063/1.3554421 (2011).