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	Defects in GaN epilayers
	Kang, J. Y. ; Huang, Q. S. ; Ogawa, T. ; Kang JY(康俊勇)
	1999-07
关键词	YELLOW LUMINESCENCE LASER-DIODES UNDOPED GAN FILMS GROWTH OXYGEN LAYER ALN
英文摘要	The intensity distribution of a yellow luminescence band was observed by cathodoluminescence (CL) on GaN epilayers with different surface morphologies grown by metallorganic vapor phase epitaxy, which showed that the hexagonal hillock surface morphology had an effect on CL image of the yellow luminescence band. The polished epilayers were further investigated by CL image, atomic number contrast, and wavelength dispersive X-ray spectrometry, and were observed that the intensity of the yellow luminescence band was relatively strong around the defects associated with impurities of O, C, and so on. The lattice images of high-resolution transmission electron microscope exhibited the structures of the defects different from that of GaN matrix, misfit edge dislocations and cracks. The results suggest that the defects may result from the precipitations in the V-shape grooves of imperfect coalescence during epitaxy.
语种	英语
内容类型	期刊论文
源URL	[http://dspace.xmu.edu.cn/handle/2288/69181]
专题	物理技术－已发表论文
推荐引用方式 GB/T 7714	Kang, J. Y.,Huang, Q. S.,Ogawa, T.,et al. Defects in GaN epilayers[J],1999.
APA	Kang, J. Y.,Huang, Q. S.,Ogawa, T.,&康俊勇.(1999).Defects in GaN epilayers..
MLA	Kang, J. Y.,et al."Defects in GaN epilayers".(1999).

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