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	Failure analysis of electrical-thermal-optical characteristics of LEDs based on AlGaInP and InGaN/GaN
	Chen, Huanting ; Keppens, Arno ; Hanselaer, Peter ; Lu, Yijun ; Gao, Yulin ; Zhuang, Rongrong ; Chen, Zhong ; Chen Z(陈忠)
	2012-10
关键词	SEMICONDUCTORS
英文摘要	The electrical-thermal-optical characteristics of AlGaInP yellow and InGaN/GaN blue LEDs under electrical stresses were studied. Since the increase of effective acceptor concentration on p-type side, the forward voltages of AlGaInP decrease after 3155 h aging. And the operating voltage of high forward bias expansion for InGaN/GaN is due to the increase of the series resistance. Compared with InGaN/GaN, AlGaInP LEDs display different trend for the relationship between optical output and ideality factors. The relationship between ideality factor and radiative recombination is also studied and established. The characteristic of different intermediate adhesive is compared during aging period based on transient thermal test.; Key Science Project of Fujian Province, China [2011H0021, 2011H6025, 2012H0039]; Natural Science Foundation of Fujian Province, China [2011J05162]; Education Bureau of Fujian Province, China [JA11175]; Foundation of Zhangzhou Normal University, China [SJ1017]
语种	英语
出版者	MAIK NAUKA/INTERPERIODICA/SPRINGER
内容类型	期刊论文
源URL	[http://dx.doi.org/10.1134/S1063782612100041]
专题	物理技术－已发表论文
推荐引用方式 GB/T 7714	Chen, Huanting,Keppens, Arno,Hanselaer, Peter,et al. Failure analysis of electrical-thermal-optical characteristics of LEDs based on AlGaInP and InGaN/GaN[J],2012.
APA	Chen, Huanting.,Keppens, Arno.,Hanselaer, Peter.,Lu, Yijun.,Gao, Yulin.,...&陈忠.(2012).Failure analysis of electrical-thermal-optical characteristics of LEDs based on AlGaInP and InGaN/GaN..
MLA	Chen, Huanting,et al."Failure analysis of electrical-thermal-optical characteristics of LEDs based on AlGaInP and InGaN/GaN".(2012).

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