Effect of the InAlAs and InGaAs combination strain-reducing layer on 13 mu m emission self-assembled InAs/GaAs quantum dots

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	Effect of the InAlAs and InGaAs combination strain-reducing layer on 13 mu m emission self-assembled InAs/GaAs quantum dots
	Fang, ZD ; Gong, Z ; Miao, ZH ; Kong, LM ; Xu, XH ; Ni, HQ ; Niu, ZC ; Xu XH(许小红)
刊名	http://dx.doi.org/10.1088/0022-3727/37/7/010
	2004-04-07
关键词	PHOTOLUMINESCENCE LASER TEMPERATURE WAVELENGTH SEPARATION ISLANDS
英文摘要	Self-assembled InAs quantum dots (QDs) with differing deposition thicknesses covered by InxAl1-xAs (x = 0.2, 0.3) and In0.2Ga0.8As combination strain-reducing layers (CSRLs) were grown by molecular beam epitaxy. Their structural and optical properties were investigated by atomic force microscopy and photoluminescence spectroscopy, respectively. The emission peak position of InAs QDs capped by CSRL can reach 1.34 mum at room temperature with a relatively larger energy splitting of 93 meV between the ground and first excited states.
语种	英语
出版者	J PHYS D APPL PHYS
内容类型	期刊论文
源URL	[http://dspace.xmu.edu.cn/handle/2288/88512]
专题	化学化工－已发表论文
推荐引用方式 GB/T 7714	Fang, ZD,Gong, Z,Miao, ZH,et al. Effect of the InAlAs and InGaAs combination strain-reducing layer on 13 mu m emission self-assembled InAs/GaAs quantum dots[J]. http://dx.doi.org/10.1088/0022-3727/37/7/010,2004.
APA	Fang, ZD.,Gong, Z.,Miao, ZH.,Kong, LM.,Xu, XH.,...&许小红.(2004).Effect of the InAlAs and InGaAs combination strain-reducing layer on 13 mu m emission self-assembled InAs/GaAs quantum dots.http://dx.doi.org/10.1088/0022-3727/37/7/010.
MLA	Fang, ZD,et al."Effect of the InAlAs and InGaAs combination strain-reducing layer on 13 mu m emission self-assembled InAs/GaAs quantum dots".http://dx.doi.org/10.1088/0022-3727/37/7/010 (2004).