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	THEORETICAL ANALYSIS ON THE PHOTOELECTRIC CONVERSION OF POLYMER SEMICONDUCTOR
	Tian, Z. W. ; Tian ZW(田昭武)
	1985
英文摘要	Sunlight may be converted into electrical or chemical energy by semiconductors composed of suitably doped polymers (e.g. polyacetylene). The mobility of the dopant in the polymer is significant and the concentration of dopant is not uniform in the semiconductor polymer because of the electric field in the spcae-charge region. The theoretical treatment for traditional semiconductor, even the depletion layer approximation cannot be applied to this case. It is interesting to study quantitatively the distribution of concentrations of dopant and carriers as well as the electric potential and field. In order to search for polymer semiconductor material as photoelectrode of high performance, it is necessary to study quantitative relationships between the conversion efficiency and various parameters of the semiconductor bulk properties. for the steady state of planar Delta-type semiconductor illuminated by mono-chromatic light, the followin six simultaneous differential equations can be formulated, d phi/dx= -epsilon (1) dN(D)/dx= q/kT epsilon N(D) (4) d epsilon/dx=q/theta theta(D)(N(upsilon) + p + n) (2) dp/dx=q/kT(epsilon p-J(p)/mu(p)) (5) dn/dx=q/kT(-epsilon n-J(p)/mu(sic) (3) dJ(p)/dx=aI degrees c(-center dot center dot)-P/tau Delta (6) Since the emphasis is put on the selection of the bulk properties of new semiconductor polymers, it is assumed that the photovoltage loss and the photocurrent loss due to electrode kinetics and surface recombination at semiconductor/solution interface are aegligible. The above boundary problem is rather complicate. By considering the appropriate boundary conditions, the digital solutions are obtained for mobile dopant semiconductors and shown graphically in comparison with im-mobile dopant semiconductors (2, 3). The physical significance of the variable and typical values (unless otherwise specified) of the parameters are as follows: x: distance from the semiconductor/solution interface (m) phi: electric potential (V) e: electric field strength (V m(-1)) n,p: electron and hole concentration (m(-3)) N(D:) dopant concentration (m(-3)) J(p): hole flux per unit area unit time (m(-2)s(-2)) n(1): intrinsic carrier concentration, 1 x 10(2)m(-s) Ng: donor bulk concentration, 1 x 10(22)m(-s) mu(sic), mu(p): electron and hole mobility, 1 x 10(-2)m(2)V(-1)s(-1) theta: dielectric constant, 12 tau(3): lifetiem due to bulk recombination, 1 x 10(-theta)s alpha(1): absorption coefficient of light by semiconductor, 3 x 10(theta)m(-1) I(2)(0): number of photons absorbed per unit area unit time, 2 x 10(21)m(-2)s(-1) Some of the digital solution are shown in Figs. 1 to 8. In Figs. 1 to 5. solid curves-refer to mobile dopant semiconductors and dotted curves center dot center dot center dot center dot center dot center dot refer to immobile dopant semiconductors. The differences in maxiaum output power are insignificant, because the electric fields are not very strong under the condition of maximum output power. But the effects of mu(2) tau(3) on output are significant.
语种	英语
内容类型	期刊论文
源URL	[http://dspace.xmu.edu.cn/handle/2288/63057]
专题	化学化工－已发表论文
推荐引用方式 GB/T 7714	Tian, Z. W.,Tian ZW. THEORETICAL ANALYSIS ON THE PHOTOELECTRIC CONVERSION OF POLYMER SEMICONDUCTOR[J],1985.
APA	Tian, Z. W.,&田昭武.(1985).THEORETICAL ANALYSIS ON THE PHOTOELECTRIC CONVERSION OF POLYMER SEMICONDUCTOR..
MLA	Tian, Z. W.,et al."THEORETICAL ANALYSIS ON THE PHOTOELECTRIC CONVERSION OF POLYMER SEMICONDUCTOR".(1985).

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