Self-healing Behavior of 2D C/SiC Modified by Partial Boron Carbide Matrix after Annealing at Low Temperature in Wet Oxygen

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	Self-healing Behavior of 2D C/SiC Modified by Partial Boron Carbide Matrix after Annealing at Low Temperature in Wet Oxygen
	Li, S. W. ; Zhang, L. T. ; Liu, Y. S. ; Cheng, L. F. ; Feng, Z. D. ; Luan, X. G. ; Zhang, W. H. ; Yang, W. B. ; Feng ZD(冯祖德)
刊名	http://dx.doi.org/10.3724/SP.J.1077.2010.01199
	2010-09
关键词	OXIDATION RESISTANCE COMPOSITES NITRIDE
英文摘要	National Natural Science Foundation [90405015, 50672076, 50425208]; Oxidation behavior of 2D C/SiC composites modified by boron carbide self-sealing matrix was investigated at low temperature of 700 degrees C in wet oxygen. Oxidation tests were conducted under a creep stress of 100MPa up to 60h. Microstructural evolution of the modified composites was explored by SEM and TEM. Results show that the modified composites hold better inoxidizability than the conventional C/SiC composites, which is caused by the self-heal of matrix cracks (and the stress enlarged ones) with oxidation induced B2O3 and the inhibition of C oxidation. The unoxidized B-C is identified as a coagent of B2O3 to fulfill the healing. Healing ability of the modified matrix is preserved in 60h and is valid for longer periods of time.
语种	英语
内容类型	期刊论文
源URL	[http://dspace.xmu.edu.cn/handle/2288/59069]
专题	材料学院－已发表论文
推荐引用方式 GB/T 7714	Li, S. W.,Zhang, L. T.,Liu, Y. S.,et al. Self-healing Behavior of 2D C/SiC Modified by Partial Boron Carbide Matrix after Annealing at Low Temperature in Wet Oxygen[J]. http://dx.doi.org/10.3724/SP.J.1077.2010.01199,2010.
APA	Li, S. W..,Zhang, L. T..,Liu, Y. S..,Cheng, L. F..,Feng, Z. D..,...&冯祖德.(2010).Self-healing Behavior of 2D C/SiC Modified by Partial Boron Carbide Matrix after Annealing at Low Temperature in Wet Oxygen.http://dx.doi.org/10.3724/SP.J.1077.2010.01199.
MLA	Li, S. W.,et al."Self-healing Behavior of 2D C/SiC Modified by Partial Boron Carbide Matrix after Annealing at Low Temperature in Wet Oxygen".http://dx.doi.org/10.3724/SP.J.1077.2010.01199 (2010).