Influence of substoichiometer on the laser-induced damage characters of HfO2 thin films

CORC > 上海光学精密机械研究所 > 中国科学院上海光学精密机械研究所 > 光学薄膜技术研究与发展中心

	Influence of substoichiometer on the laser-induced damage characters of HfO2 thin films
	Zhang Dongping ; Wang Congjuan ; Fan Ping ; Cai Xingmin ; Liang Guangxing ; Shao JD(邵建达) ; Fan ZX(范正修)
刊名	appl. surf. sci.
	2009
卷号	255 期号:8 页码:4646
关键词	Thin film Dual-ion-beam sputtering Substoichiometer
ISSN号	0169-4332
中文摘要	hfo2 is one of the most important high refractive index materials for depositing high power optical mirrors. in this research, hfo2 thin films were prepared by dual-ion beam reactive sputtering method, and the laser-induced damage thresholds (lidt) of the sample were measured in 1-on-1 mode for laser with 1064 nm wavelength. the results indicate that the lidt of the as-grown sample is only 3.96 j/cm(2), but it is increased to 8.98 j/cm(2) after annealing under temperature of 200 degrees c in atmosphere. by measuring the laser weak absorption and sims of the samples, we deduced that substoichiometer is the main reason for the low lidt of the as-grown sample, and the experiment results were well explained with the theory of electronic-avalanche ionization. (c) 2008 elsevier b.v. all rights reserved.
学科主题	光学薄膜
资助信息	national natural science foundation of china [60608020]; shenzhen government [200717]; shenzhen university [200617]
语种	英语
WOS记录号	WOS:000262695200053
公开日期	2009-09-22
内容类型	期刊论文
源URL	[http://ir.siom.ac.cn/handle/181231/4778]
专题	上海光学精密机械研究所_光学薄膜技术研究与发展中心
推荐引用方式 GB/T 7714	Zhang Dongping,Wang Congjuan,Fan Ping,et al. Influence of substoichiometer on the laser-induced damage characters of HfO2 thin films[J]. appl. surf. sci.,2009,255(8):4646, 4649.
APA	Zhang Dongping.,Wang Congjuan.,Fan Ping.,Cai Xingmin.,Liang Guangxing.,...&范正修.(2009).Influence of substoichiometer on the laser-induced damage characters of HfO2 thin films.appl. surf. sci.,255(8),4646.
MLA	Zhang Dongping,et al."Influence of substoichiometer on the laser-induced damage characters of HfO2 thin films".appl. surf. sci. 255.8(2009):4646.