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	High efficiency modeling of broadband millimeter-wave CMOS FETs with gate width scalability by using pre-modeled cells
	Tang Y(唐杨) ; Ye ZC(叶佐昌) ; Wang Y(王燕) ; Tang Yang ; Ye Zuochang ; Wang Yan
	2016-03-30 ; 2016-03-30
关键词	CMOS MOSFETs layout millimeter-wave scalable model TN386
其他题名	High efficiency modeling of broadband millimeter-wave CMOS FETs with gate width scalability by using pre-modeled cells
中文摘要	Thisworkpresentsahighlyefficientapproachforbroadbandmodelingofmillimeter-waveCMOSFETs with gate width scalability by using pre-modeled cells. Only a few devices with varied gate width are required to be measured and modeled with fixed models, and later used as pre-modeled cells. Then a target device with the desired gate width is constructed by choosing appropriate cells and connecting them with a wiring network. The corresponding scalable model is constructed by incorporating the fixed models of the cells used in the target device and the scalable model of the connection wires. The proposed approach is validated by experiments on 65-nm CMOS process up to 40 GHz and across a wide range of gate widths.; Thisworkpresentsahighlyefficientapproachforbroadbandmodelingofmillimeter-waveCMOSFETs with gate width scalability by using pre-modeled cells. Only a few devices with varied gate width are required to be measured and modeled with fixed models, and later used as pre-modeled cells. Then a target device with the desired gate width is constructed by choosing appropriate cells and connecting them with a wiring network. The corresponding scalable model is constructed by incorporating the fixed models of the cells used in the target device and the scalable model of the connection wires. The proposed approach is validated by experiments on 65-nm CMOS process up to 40 GHz and across a wide range of gate widths.
语种	英语 ; 英语
内容类型	期刊论文
源URL	[http://ir.lib.tsinghua.edu.cn/ir/item.do?handle=123456789/147020]
专题	清华大学
推荐引用方式 GB/T 7714	Tang Y,Ye ZC,Wang Y,et al. High efficiency modeling of broadband millimeter-wave CMOS FETs with gate width scalability by using pre-modeled cells[J],2016, 2016.
APA	唐杨,叶佐昌,王燕,Tang Yang,Ye Zuochang,&Wang Yan.(2016).High efficiency modeling of broadband millimeter-wave CMOS FETs with gate width scalability by using pre-modeled cells..
MLA	唐杨,et al."High efficiency modeling of broadband millimeter-wave CMOS FETs with gate width scalability by using pre-modeled cells".(2016).

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