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	Determination of the twist angle of GaN film by high resolution X-ray
	Hongtao Li ; Yi Luo ; Lai Wang ; Guangyi Xi ; Yang Jiang ; Wei Zhao ; Yanjun Han
	2010-10-12 ; 2010-10-12
关键词	Experimental/ dislocation density gallium compounds III-V semiconductors semiconductor thin films wide band gap semiconductors X-ray diffraction/ twist angle thin film azimuthal scan method X-ray diffraction full width at half maximum curves geometrical model dislocation density FWHM GaN/ A6170L Slip, creep, internal friction and other indirect evidence of dislocations A6855 Thin film growth, structure, and epitaxy/ GaN/bin Ga/bin N/bin
中文摘要	As an azimuthal scan method, Phi -scans preformed by X-ray diffraction are usually used to determine the twist angle in GaN films. However, both twist and tilt contribute to full width at half maximum (FWHM) of Phi -scan curves. So far no model has been proposed to distinguish the contributions of tilt and twist to FWHM of these curves. A geometrical model is presented to distinguish their contributions, which is very important to precisely determine the dislocation densities in GaN. Based on this model, FWHM of Phi -scans can be expressed as a simple explicit function of the original twist angle and an additional twist angle induced by tilt. These twist angles are then simply and effectively determined for various GaN films according to this simple function, and are in good agreement with those deduced from Phi -scan data fitting.
语种	英语
出版者	Japan Society of Applied Physics through the Institute of Pure and Applied Physics ; Japan
内容类型	期刊论文
源URL	[http://hdl.handle.net/123456789/82555]
专题	清华大学
推荐引用方式 GB/T 7714	Hongtao Li,Yi Luo,Lai Wang,et al. Determination of the twist angle of GaN film by high resolution X-ray[J],2010, 2010.
APA	Hongtao Li.,Yi Luo.,Lai Wang.,Guangyi Xi.,Yang Jiang.,...&Yanjun Han.(2010).Determination of the twist angle of GaN film by high resolution X-ray..
MLA	Hongtao Li,et al."Determination of the twist angle of GaN film by high resolution X-ray".(2010).

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