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	Thickness measurement of GaN films by X-ray diffraction
	Li Hong-Tao ; Luo Yi ; Xi Guang-Yi ; Wang Lai ; Jiang Yang ; Zhao Wei ; Han Yan-Jun ; Hao Zhi-Biao ; Sun Chang-Zheng
	2010-10-12 ; 2010-10-12
关键词	Experimental/ crystallites gallium compounds III-V semiconductors internal stresses mosaic structure semiconductor epitaxial layers thickness measurement wide band gap semiconductors X-ray diffraction/ thickness measurement X-ray diffraction gallium nitride heteroepitaxial film large-mismatch substrate mosaic structure Williamson-Hall plot method diffraction profile shape analysis broadening factors crystallite size inhomogeneous strain sapphire substrate spectroscopic ellipsometry size 0.7 mum to 4.2 mum GaN Al/sub 2/O/sub 3// A6855 Thin film growth, structure, and epitaxy A6220 Mechanical properties of solids (related to microscopic structure) A6480G Microstructure A6860 Physical properties of thin films, nonelectronic/ size 7.0E-07 to 4.2E-06 m/ GaN/bin Ga/bin N/bin Al2O3/sur Al2/sur O3/sur Al/sur O/sur Al2O3/bin Al2/bin O3/bin Al/bin O/bin
中文摘要	Precise measurement and control of GaN-film thickness is very important for GaN-based material epitaxy and device fabrication. However, GaN-films heteroepitaxially grown on large-mismatch substrates, such as sapphire, SiC and Si, etc., usually show a mosaic structure, which causes great difficulty to the GaN-film thickness measurement. Combining the advantages of Williamson-Hall plot method and diffraction profile shape analysis method, a new strategy was presented to effectively distinguish the X-ray diffraction broadening factors of finite crystallite size and inhomogeneous strain, which can be used to precisely and reliably determine the thickness of epitaxial films. The thickness of a series of GaN films grown on sapphire substrates in the range of 0.7-4.2 mu m were measured by this method. Comparing with the thickness obtained from spectroscopic ellipsometry measurements, the difference was found to be within 4% , which shows the excellent performance of this method.
语种	中文
出版者	Chinese Physical Society ; China
内容类型	期刊论文
源URL	[http://hdl.handle.net/123456789/82258]
专题	清华大学
推荐引用方式 GB/T 7714	Li Hong-Tao,Luo Yi,Xi Guang-Yi,et al. Thickness measurement of GaN films by X-ray diffraction[J],2010, 2010.
APA	Li Hong-Tao.,Luo Yi.,Xi Guang-Yi.,Wang Lai.,Jiang Yang.,...&Sun Chang-Zheng.(2010).Thickness measurement of GaN films by X-ray diffraction..
MLA	Li Hong-Tao,et al."Thickness measurement of GaN films by X-ray diffraction".(2010).

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