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	Electronic transport properties in doped C-60 molecular devices
	Zhang, Xiao-Jiao ; Long, Meng-Qiu ; Chen, Ke-Qiu ; Shuai, Z. ; Wan, Qing ; Zou, B. S. ; Zhang, Yan
	2010-10-12 ; 2010-10-12
关键词	density functional theory doping profiles fullerene compounds fullerene devices Green's function methods negative resistance NEGATIVE DIFFERENTIAL-RESISTANCE TEMPERATURE Physics, Applied
中文摘要	By applying nonequilibrium Green's functions in combination with the density-functional theory, we investigate the electronic transport properties of molecular junctions constructed by C-60, C59N, and C59B. The results show that the electronic transport properties of molecular junctions can be modulated by doped atoms. Negative differential resistance behavior can be observed in a certain bias range for C-60 molecular junction but cannot be observed in C59N and C59B molecular junctions. A mechanism is proposed for the doping effect and negative differential resistance behavior.
语种	英语 ; 英语
出版者	AMER INST PHYSICS ; MELVILLE ; CIRCULATION & FULFILLMENT DIV, 2 HUNTINGTON QUADRANGLE, STE 1 N O 1, MELVILLE, NY 11747-4501 USA
内容类型	期刊论文
源URL	[http://hdl.handle.net/123456789/80976]
专题	清华大学
推荐引用方式 GB/T 7714	Zhang, Xiao-Jiao,Long, Meng-Qiu,Chen, Ke-Qiu,et al. Electronic transport properties in doped C-60 molecular devices[J],2010, 2010.
APA	Zhang, Xiao-Jiao.,Long, Meng-Qiu.,Chen, Ke-Qiu.,Shuai, Z..,Wan, Qing.,...&Zhang, Yan.(2010).Electronic transport properties in doped C-60 molecular devices..
MLA	Zhang, Xiao-Jiao,et al."Electronic transport properties in doped C-60 molecular devices".(2010).

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