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	Grain boundary defects-mediated room temperature ferromagnetism in Co-doped ZnO film
	Liu, X.J. ; Zhu, X.Y. ; Luo, J.T. ; Zeng, F. ; Pan, F.
	2010-10-12 ; 2010-10-12
关键词	Experimental/ buffer layers cobalt ferromagnetism grain boundaries grain size II-VI semiconductors magnetic polarons magnetisation semiconductor doping semiconductor growth semiconductor thin films sputter deposition vacancies (crystal) wide band gap semiconductors XANES zinc compounds/ grain boundary defects room temperature ferromagnetism doping thin films magnetron sputtering buffer layer ferromagnetic ordering substitutional behavior grain size oxygen vacancies K-edge X-ray-absorption near-edge spectra saturated magnetization bound magnetic polaron mechanism mediative effects temperature 293 K to 298 K Zn/sub 0.97/Co/sub 0.03/O Zn/sub 0.97/Co/sub 0.03/O-ZnO/ A6170T Doping and implantation of impurities A6855 Thin film growth, structure, and epitaxy A7550D Ferromagnetism of nonmetals A6170N Grain and twin boundaries A8115C Deposition by sputtering A6480G Microstructure A6170B Interstitials and vacancies A7870D X-ray absorption and absorption edges (condensed matter) A7560E Magnetization curves, hysteresis, Barkhausen and related effects A7138 Polarons and electron-phonon interactions A7530D Spin waves in magnetically ordered materials B2550B Semiconductor doping B2520D II-VI and III-V semiconductors B0520B Sputter deposition/ temperature 2.93E+02 to 2.98E+02 K/ Zn0.97Co0.03O/ss Co0.03/ss Zn0.97/ss Co/ss Zn/ss O/ss Zn0.97Co0.03O-ZnO/int Zn0.97Co0.03O/int Co0.03/int Zn0.97/int ZnO/int Co/int Zn/int O/int Zn0.97Co0.03O/ss Co0.03/ss Zn0.97/ss Co/ss Zn/ss O/ss ZnO/bin Zn/bin O/bin
中文摘要	Zn/sub 0.97/Co/sub 0.03/O films with and without ZnO buffer layer have been fabricated by magnetron sputtering to investigate the role of grain boundary defects in ferromagnetic ordering in this system. The deposited wurtzite films with (002) preferred orientation all show intrinsic room temperature ferromagnetism based on the substitutional behavior of Co/sup 2+/ . We found that the ZnO/Co:ZnO film grows in smaller grain size, compared with Co:ZnO film, which leads to the increase in grain boundary defects. Meanwhile the increase in oxygen vacancies is confirmed by Co K-edge X-ray-absorption near-edge spectra and the enhancement of saturated magnetization is observed in ZnO/Co:ZnO film. Hence the most important factor for mediating ferromagnetism is proposed to be grain boundary defects, i.e., oxygen vacancies. Bound magnetic polaron mechanism is adopted to explain the intrinsic origin and the mediative effects of grain boundary defects on ferromagnetism in Co-doped ZnO films. [All rights reserved Elsevier].
语种	英语
出版者	Elsevier Sequoia S.A. ; Switzerland
内容类型	期刊论文
源URL	[http://hdl.handle.net/123456789/78258]
专题	清华大学
推荐引用方式 GB/T 7714	Liu, X.J.,Zhu, X.Y.,Luo, J.T.,et al. Grain boundary defects-mediated room temperature ferromagnetism in Co-doped ZnO film[J],2010, 2010.
APA	Liu, X.J.,Zhu, X.Y.,Luo, J.T.,Zeng, F.,&Pan, F..(2010).Grain boundary defects-mediated room temperature ferromagnetism in Co-doped ZnO film..
MLA	Liu, X.J.,et al."Grain boundary defects-mediated room temperature ferromagnetism in Co-doped ZnO film".(2010).

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